公开(公告)号：US20140367683A1

公开(公告)日：2014-12-18

申请号：US14478055

申请日：2014-09-05

Applicant: Sharp Kabushiki Kaisha

Inventor： Yoshifumi OHTA ,  Go MORI ,  Hirohiko NISHIKI ,  Yoshimasa CHIKAMA ,  Tetsuya AITA ,  Masahiko SUZUKI ,  Okifumi NAKAGAWA ,  Michiko TAKEI ,  Yoshiyuki HARUMOTO ,  Takeshi HARA

IPC: H01L29/22 ,  H01L29/786

CPC classification number: H01L29/22 ,  G02F1/1368 ,  G02F2202/10 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.

Abstract translation: 本发明提供一种能够实现具有稳定晶体管特性的薄膜晶体管的氧化物半导体，具有由氧化物半导体形成的沟道层的薄膜晶体管及其制造方法，以及配备有该薄膜晶体管的显示装置。 本发明的氧化物半导体是薄膜晶体管的氧化物半导体。 氧化物半导体包括铟，镓，锌和氧作为构成原子，并且氧化物半导体的氧含量为化学计量条件的87％至95％，以原子单位计为100％。