公开(公告)号：US20160268459A1

公开(公告)日：2016-09-15

申请号：US15031838

申请日：2014-10-24

申请人： SHARP KABUSHIKI KAISHA

发明人： Kenji KIMOTO ,  Naoki KOIDE ,  Yuta MATSUMOTO ,  Junichi NAKAMURA

IPC分类号： H01L31/036 ,  H01L31/0352 ,  H01L31/0224

摘要： There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline semiconductor layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a semiconductor substrate (12), a first semiconductor layer (20n), a second semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). The first semiconductor layer has a first conductive type. The second semiconductor layer has a second conductive type. The first electrode is formed on the first semiconductor layer. The second electrode is formed on the second semiconductor layer. The first electrode includes a first transparent conductive layer (26n) formed on the first semiconductor layer, and a first metal layer (28n) formed on the first transparent conductive layer. The first metal layer includes a plurality of metal crystal grains in which the average crystal grain size in the in-surface direction of the first metal layer is greater than the thickness of the first metal layer.

摘要翻译： 提供了一种光电转换元件，其可以防止含有杂质的非晶体半导体层与形成在非晶半导体层上的电极之间的接触电阻增加，并且可以提高元件特性。 光电转换元件（10）包括半导体衬底（12），第一半导体层（20n），第二半导体层（20p），第一电极（22n）和第二电极（22p）。 第一半导体层具有第一导电类型。 第二半导体层具有第二导电类型。 第一电极形成在第一半导体层上。 第二电极形成在第二半导体层上。 第一电极包括形成在第一半导体层上的第一透明导电层（26n）和形成在第一透明导电层上的第一金属层（28n）。 第一金属层包括其中第一金属层的表面方向上的平均晶粒尺寸大于第一金属层的厚度的多个金属晶粒。

公开(公告)号：US20160268458A1

公开(公告)日：2016-09-15

申请号：US15031834

申请日：2014-10-24

申请人： SHARP KABUSHIKI KAISHA

发明人： Kenji KIMOTO ,  Naoki KOIDE ,  Liumin ZOU ,  Masamichi KOBAYASHI

IPC分类号： H01L31/036 ,  H01L31/0352 ,  H01L31/028 ,  H01L31/0224

CPC分类号： H01L31/036 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/0747 ,  Y02E10/547

摘要： There is provided a photoelectric conversion device which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline silicon layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a silicon substrate (12), a first non-crystalline semiconductor layer (20n), a second non-crystalline semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). One electrode (22n) includes first conductive layers (26n, 26p), and second conductive layers (28n, 28p). The first conductive layers (26n, 26p) have a first metal as a main component. The second conductive layers (28n, 28p) contain a second metal which is more likely to be oxidized than the first metal, are formed to be in contact with the first conductive layers (26n, 26p), and are disposed to be closer to the silicon substrate (12) than the first conductive layers (26n, 26p).

摘要翻译： 提供了一种能够防止含有杂质的非结晶半导体层与形成在非晶硅层上的电极之间的接触电阻增加的光电转换装置，并且可以提高元件特性。 光电转换元件（10）包括硅衬底（12），第一非晶半导体层（20n），第二非晶半导体层（20p），第一电极（22n）和第二电极（22p ）。 一个电极（22n）包括第一导电层（26n，26p）和第二导电层（28n，28p）。 第一导电层（26n，26p）具有第一金属作为主要成分。 第二导电层（28n，28p）包含比第一金属更可能被氧化的第二金属，形成为与第一导电层（26n，26p）接触，并且被设置为更靠近 硅基板（12）比第一导电层（26n，26p）。

公开(公告)号：US20170222080A1

公开(公告)日：2017-08-03

申请号：US15329661

申请日：2015-06-29

申请人： Sharp Kabushiki Kaisha

发明人： Tetsuya IDE ,  Kenichi HIGASHI ,  Naoki KOIDE ,  Osamu KAWASAKI ,  Hisayuki UTSUMI

IPC分类号： H01L31/052 ,  H02S40/42

CPC分类号： H01L31/052 ,  H02S40/42 ,  Y02E10/50

摘要： Provided are a solar cell module, a method of manufacturing the solar cell module, and a photovoltaic power generation system including the solar cell module. The solar cell module includes a solar cell group in which a plurality of solar cells are arranged, and a first heat storage layer that is disposed on a rear surface side of the solar cell group. The first heat storage layer is a layer that contains 80% by weight or greater of a heat storage material including a first latent heat storage material having a phase change temperature of T1. The solar cell module may further include a second heat storage layer, which includes a second latent heat storage material having a phase change temperature T2 different from the phase change temperature T1, on a rear surface side of the first heat storage layer.

公开(公告)号：US20160268450A1

公开(公告)日：2016-09-15

申请号：US15031904

申请日：2014-08-29

申请人： SHARP KABUSHIKI KAISHA

发明人： Kenji KIMOTO ,  Naoki KOIDE

IPC分类号： H01L31/0216 ,  H01L31/0288 ,  H01L31/0376

CPC分类号： H01L31/02167 ,  H01L31/02168 ,  H01L31/0288 ,  H01L31/0376 ,  H01L31/0747 ,  Y02E10/50

摘要： A photoelectric conversion element 100 includes an n-type monocrystalline silicon substrate 1, an non-crystalline thin film 2, i-type non-crystalline thin films 11 to 1m and 21 to 2m-1, p-type non-crystalline thin films 31 to 3m, and n-type non-crystalline thin films 41 to 4m-1. The non-crystalline thin film 2 is configured of non-crystalline thin films 201 and 202 and is disposed in contact with the surface on the light incident side of the n-type monocrystalline silicon substrate 1. The non-crystalline thin film 201 is configured of a-Si, and the non-crystalline thin film 202 is configured of a-SiNx (0

摘要翻译： 光电转换元件100包括n型单晶硅衬底1，非晶体薄膜2，i型非晶体薄膜11至1m和21至2m-1，p型非晶薄膜31 至3μm，以及n型非晶质薄膜41〜4m-1。 非晶体薄膜2由非晶体薄膜201和202构成，并且与n型单晶硅衬底1的光入射侧的表面接触地设置。非晶体薄膜201被配置 的a-Si，非结晶薄膜202由a-SiNx（0

公开(公告)号：US20170170342A1

公开(公告)日：2017-06-15

申请号：US15116926

申请日：2015-01-20

申请人： SHARP KABUSHIKI KAISHA

发明人： Masatomi HARADA ,  Takeshi KAMIKAWA ,  Kazuya TSUJINO ,  Naoki KOIDE ,  Naoki ASANO ,  Yuta MATSUMOTO

IPC分类号： H01L31/0236 ,  H01L31/0216 ,  H01L31/0747

CPC分类号： H01L31/02363 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/035281 ,  H01L31/0508 ,  H01L31/0516 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

摘要： There is provided a photoelectric conversion element which includes an n-type single crystal silicon substrate (1). The n-type single crystal silicon substrate (1) includes a central region (11) and an end-portion region (12). The central region (11) is a region which has the same central point as the central point of the n-type single crystal silicon substrate (1) and is surrounded by a circle. The diameter of the circle is set to be a length which is 40% of a length of the shortest side among four sides of the n-type single crystal silicon substrate (1). The central region (11) has a thickness t1. The end-portion region (12) is a region of being within 5 mm from an edge of the n-type single crystal silicon substrate (1). The end-portion region (12) is disposed on an outside of the central region (11) in an in-plane direction of the n-type single crystal silicon substrate (1), and has a thickness t2 which is thinner than the thickness t1. The end-portion region (12) has average surface roughness which is smaller than average surface roughness of the central region (11).

公开(公告)号：US20160268462A1

公开(公告)日：2016-09-15

申请号：US15031876

申请日：2014-08-29

申请人： SHARP KABUSHIKI KAISHA

发明人： Kenji KIMOTO ,  Naoki KOIDE ,  Toshihiko SAKAI ,  Tokuaki KUNIYOSHI

IPC分类号： H01L31/0384 ,  H01L31/0376 ,  H01L31/028

CPC分类号： H01L31/0384 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/03762 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A photoelectric conversion element 100 includes an n-type monocrystalline silicon substrate 1, an non-crystalline thin film 2, i-type non-crystalline thin films 11 to 1m and 21 to 2m−1, p-type non-crystalline thin films 31 to 3m, and n-type non-crystalline thin films 41 to 4m−1. The non-crystalline thin film 2 is configured of non-crystalline thin films 201 and 202 and is disposed in contact with the surface on the light incident side of the n-type monocrystalline silicon substrate 1. The non-crystalline thin film 201 is configured of a-Si, and the non-crystalline thin film 202 is configured of a-SiNx (0.78≦x≦1.03). The i-type non-crystalline thin films 11 to 1m and 21 to 2m−1 are disposed in contact with the rear surface of the n-type monocrystalline silicon substrate 1. The p-type non-crystalline thin films 31 to 3m are disposed in contact with the i-type non-crystalline thin films 11 to 1m. The n-type non-crystalline thin films 41 to 4m−1 are disposed in contact with the i-type non-crystalline thin films 21 to 2m−1.

摘要翻译： 光电转换元件100包括n型单晶硅衬底1，非晶体薄膜2，i型非晶体薄膜11至1m和21至2m-1，p型非晶薄膜31 至3μm，以及n型非晶质薄膜41〜4m-1。 非晶体薄膜2由非晶体薄膜201和202构成，并且与n型单晶硅衬底1的光入射侧的表面接触地设置。非晶体薄膜201被配置 的a-Si，非结晶薄膜202由a-SiNx（0.78≤x≤1.03）构成。 i型非结晶性薄膜11〜1m，21〜2m-1与n型单晶硅基板1的背面接触地配置。将p型非晶质薄膜31〜3m配置在 与i型非晶体薄膜11〜1m接触。 n型非晶质薄膜41〜4m-1配置成与i型非晶质薄膜21〜2m-1接触。

公开(公告)号：US20160247949A1

公开(公告)日：2016-08-25

申请号：US15031823

申请日：2014-10-24

申请人： SHARP KABUSHIKI KAISHA

发明人： Kenji KIMOTO ,  Naoki KOIDE ,  Takeshi HIEDA ,  Junichi NAKAMURA

IPC分类号： H01L31/0224 ,  H01L31/068 ,  H01L31/0376

摘要： There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline semiconductor layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a semiconductor substrate (12), a first semiconductor layer (20n), a second semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). The first semiconductor layer (20n) has a first conductive type. The second semiconductor layer (20p) has a second conductive type opposite to the first conductive type. The first electrode (22n) is formed on the first semiconductor layer (20n). The second electrode (22p) is formed on the second semiconductor layer (20p). At least one electrode of the first electrode (22n) and the second electrode (22p) includes a plurality of metal crystal grains. The average crystal grain size of the metal crystal grains in the in-surface direction of electrode is greater than the thickness of the electrode.

摘要翻译： 提供了一种光电转换元件，其可以防止含有杂质的非晶体半导体层与形成在非晶半导体层上的电极之间的接触电阻增加，并且可以提高元件特性。 光电转换元件（10）包括半导体衬底（12），第一半导体层（20n），第二半导体层（20p），第一电极（22n）和第二电极（22p）。 第一半导体层（20n）具有第一导电类型。 第二半导体层（20p）具有与第一导电类型相反的第二导电类型。 第一电极（22n）形成在第一半导体层（20n）上。 第二电极（22p）形成在第二半导体层（20p）上。 第一电极（22n）和第二电极（22p）的至少一个电极包括多个金属晶粒。 电极表面方向上的金属晶粒的平均晶粒尺寸大于电极的厚度。