公开(公告)号：US20090093079A1

公开(公告)日：2009-04-09

申请号：US12244051

申请日：2008-10-02

Applicant: Serdar Manakli ,  Jessy Bustos ,  Philippe Coronel ,  Laurent Pain

Inventor： Serdar Manakli ,  Jessy Bustos ,  Philippe Coronel ,  Laurent Pain

IPC: H01L21/3205 ,  H01L21/02

CPC classification number: H01L21/263 ,  H01L21/0277 ,  H01L29/42392 ,  H01L29/78648 ,  H01L29/78696

Abstract: A method is for producing an asymmetric architecture semi-conductor device. The device includes a substrate, and in stacked relation, a first photosensitive layer, a non-photosensitive layer, and a second photosensitive layer. The method includes a first step of exposing a first zone in each of the photosensitive layers by a first beam of electrons traversing the non-photosensitive layer. A second step includes exposing at least one second zone of one of the two photosensitive layers by a second beam of electrons or photons or ions, thereby producing a widening of one of the first zones compared to the other first zone such that the second zone is in part superimposed on one of the first zones.

Abstract translation: 一种用于制造非对称架构半导体器件的方法。 该装置包括基板，并且以堆叠关系，包括第一感光层，非感光层和第二感光层。 该方法包括通过穿过非感光层的第一电子束暴露每个感光层中的第一区的第一步骤。 第二步骤包括通过第二电子束或光子或离子暴露两个感光层中的一个的至少一个第二区域，从而与其它第一区域相比产生第一区域之一的加宽，使得第二区域 部分地叠加在第一区域之一上。

公开(公告)号：US20090162789A1

公开(公告)日：2009-06-25

申请号：US12226973

申请日：2006-05-05

Applicant: Laurent Pain ,  Serdar Manakli ,  Georges Bervin

Inventor： Laurent Pain ,  Serdar Manakli ,  Georges Bervin

IPC: G03C5/00

CPC classification number: G03F7/70433 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70383 ,  H01J37/3174 ,  Y10S430/143

Abstract: A method for transferring a predetermined pattern onto a flat support performed by direct writing by means of a particle beam comprises at least: deposition of a photoresist layer on a free surface of the support, application of the beam on exposed areas of the photoresist layer, performing correction by modulation of exposure doses received by each exposed area, developing of the photoresist layer so as to form said pattern. Correction further comprises determination of a substitution pattern (11) comprising at least one subresolution feature and use of the substitution pattern (11) for determining the areas to be exposed when the electron beam is applied. In addition, modulation takes account of the density of the substitution pattern (11) near to each exposed area.

Abstract translation: 通过用粒子束进行直接写入而将预定图案转移到平坦支撑件上的方法至少包括：在支撑体的自由表面上沉积光致抗蚀剂层，在光致抗蚀剂层的曝光区域上施加光束， 通过调制由每个曝光区域接收的曝光剂量来校正光致抗蚀剂层的显影以形成所述图案。 校正还包括确定包含至少一个子分解特征的取代图案（11），并且使用取代图案（11）来确定当施加电子束时要暴露的区域。 此外，调制考虑了靠近每个暴露区域的取代图案（11）的密度。

公开(公告)号：US09607808B2

公开(公告)日：2017-03-28

申请号：US13641120

申请日：2011-04-13

Applicant: Serdar Manakli

Inventor： Serdar Manakli

IPC: G03F7/00 ,  H01J37/31 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  G03F7/20 ,  H01J37/317

CPC classification number: H01J37/31 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  G03F7/2061 ,  G03F7/2063 ,  H01J37/3174

Abstract: A method of electron-beam lithography by direct writing solves the reliability of design of etched components through rounding of the corners of contiguous patterns, notably in patterns to be etched of critical dimension of the order of 35 nm. The method determines critical patterns, and correction patterns by subtracting patterns of corrections of dimensions and of locations as a function of rounding of external or internal corners to be corrected and etching of the corrected design. The corrections may be by a correction model taking account of the parameters of the critical patterns. A correction of the proximity effects specific to these methods is also performed, by resizing of edges of blocks to be etched in combination optimized by the energy latitude with a modulation of the radiated doses. A rescaling and negation functions and eRIF functions may be used to optimize the parameters and the realization of the extrusion.

公开(公告)号：US20130201468A1

公开(公告)日：2013-08-08

申请号：US13641128

申请日：2011-04-13

Applicant: Serdar Manakli

Inventor： Serdar Manakli

IPC: G03F7/20

CPC classification number: G03F7/70558 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

Abstract: A lithography method for a pattern to be etched on a support, notably to a method using electron radiation with direct writing on the support. Hitherto, the methods for correcting the proximity effects for dense network geometries (line spacings of 10 to 30 nm) have been reflected in a significant increase in the radiated doses and therefore in the exposure time. According to the invention, the patterns to be etched are modified as a function of the energy latitude of the process, which allows a reduction of the radiated doses.

Abstract translation: 用于在载体上蚀刻图案的光刻方法，特别是涉及使用直接写在载体上的电子辐射的方法。 迄今为止，用于校正密集网络几何形状（10至30nm的线间距）的邻近效应的方法已经反映在辐射剂量的显着增加中，因此反映在曝光时间内。 根据本发明，要蚀刻的图案被修改为过程的能量纬度的函数，这允许减少辐射剂量。

公开(公告)号：US07955914B2

公开(公告)日：2011-06-07

申请号：US12244051

申请日：2008-10-02

Applicant: Serdar Manakli ,  Jessy Bustos ,  Philippe Coronel ,  Laurent Pain

Inventor： Serdar Manakli ,  Jessy Bustos ,  Philippe Coronel ,  Laurent Pain

IPC: H01L21/00 ,  H01L21/336

CPC classification number: H01L21/263 ,  H01L21/0277 ,  H01L29/42392 ,  H01L29/78648 ,  H01L29/78696

Abstract: A method is for producing an asymmetric architecture semiconductor device. The device includes a substrate, and in stacked relation, a first photosensitive layer, a non-photosensitive layer, and a second photosensitive layer. The method includes a first step of exposing a first zone in each of the photosensitive layers by a first beam of electrons traversing the non-photosensitive layer. A second step includes exposing at least one second zone of one of the two photosensitive layers by a second beam of electrons or photons or ions, thereby producing a widening of one of the first zones compared to the other first zone such that the second zone is in part superimposed on one of the first zones.

Abstract translation: 一种用于制造非对称架构半导体器件的方法。 该装置包括基板，并且以堆叠关系，包括第一感光层，非感光层和第二感光层。 该方法包括通过穿过非感光层的第一电子束暴露每个感光层中的第一区的第一步骤。 第二步骤包括通过第二电子束或光子或离子暴露两个感光层中的一个的至少一个第二区域，从而与其它第一区域相比产生第一区域之一的加宽，使得第二区域 部分地叠加在第一区域之一上。

公开(公告)号：US09250540B2

公开(公告)日：2016-02-02

申请号：US13641128

申请日：2011-04-13

Applicant: Serdar Manakli

Inventor： Serdar Manakli

IPC: A61N5/00 ,  G03B27/32 ,  G03B27/54 ,  G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/317

CPC classification number: G03F7/70558 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

Abstract: A lithography method for a pattern to be etched on a support, notably to a method using electron radiation with direct writing on the support. Hitherto, the methods for correcting the proximity effects for dense network geometries (line spacings of 10 to 30 nm) have been reflected in a significant increase in the radiated doses and therefore in the exposure time. According to the invention, the patterns to be etched are modified as a function of the energy latitude of the process, which allows a reduction of the radiated doses.

Abstract translation: 用于在载体上蚀刻图案的光刻方法，特别是涉及使用直接写在载体上的电子辐射的方法。 迄今为止，用于校正密集网络几何形状（10至30nm的线间距）的邻近效应的方法已经反映在辐射剂量的显着增加中，因此反映在曝光时间内。 根据本发明，要蚀刻的图案被修改为过程的能量纬度的函数，这允许减少辐射剂量。

公开(公告)号：US20130181379A1

公开(公告)日：2013-07-18

申请号：US13641120

申请日：2011-04-13

Applicant: Serdar Manakli

Inventor： Serdar Manakli

IPC: H01J37/31

CPC classification number: H01J37/31 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  G03F7/2061 ,  G03F7/2063 ,  H01J37/3174

Abstract: A method of electron-beam lithography by direct writing solves the reliability of design of etched components through rounding of the corners of contiguous patterns, notably in patterns to be etched of critical dimension of the order of 35 nm. The method determines critical patterns, and correction patterns by subtracting patterns of corrections of dimensions and of locations as a function of rounding of external or internal corners to be corrected and etching of the corrected design. The corrections may be by a correction model taking account of the parameters of the critical patterns. A correction of the proximity effects specific to these methods is also performed, by resizing of edges of blocks to be etched in combination optimized by the energy latitude with a modulation of the radiated doses. A rescaling and negation functions and eRIF functions may be used to optimize the parameters and the realization of the extrusion.

Abstract translation: 通过直接写入的电子束光刻的方法通过对连续图案的角进行四舍五入来解决蚀刻元件的设计的可靠性，特别是在要蚀刻的关键尺寸为35nm的图案中。 该方法通过减去尺寸校正和位置校正的方式来确定关键模式和校正模式，作为要校正的外部或内部角落的舍入以及校正设计的蚀刻的函数。 可以通过考虑关键模式的参数的校正模型来进行校正。 还通过调整辐射剂量的调节来调整由能量纬度优化的待蚀刻块的边缘的大小来进行这些方法特有的邻近效应的校正。 可以使用重新缩放和否定函数和eRIF函数来优化参数和实现挤出。

公开(公告)号：US07897308B2

公开(公告)日：2011-03-01

申请号：US12226973

申请日：2006-05-05

Applicant: Laurent Pain ,  Serdar Manakli ,  Georges Bervin

Inventor： Laurent Pain ,  Serdar Manakli ,  Georges Bervin

IPC: G03F9/00 ,  G03C5/00

CPC classification number: G03F7/70433 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70383 ,  H01J37/3174 ,  Y10S430/143

Abstract: A method for transferring a predetermined pattern onto a flat support performed by direct writing by means of a particle beam comprises at least: deposition of a photoresist layer on a free surface of the support, application of the beam on exposed areas of the photoresist layer, performing correction by modulation of exposure doses received by each exposed area, developing of the photoresist layer so as to form said pattern. Correction further comprises determination of a substitution pattern (11) comprising at least one subresolution feature and use of the substitution pattern (11) for determining the areas to be exposed when the electron beam is applied. In addition, modulation takes account of the density of the substitution pattern (11) near to each exposed area.

Abstract translation: 通过用粒子束进行直接写入而将预定图案转移到平坦支撑件上的方法至少包括：在支撑体的自由表面上沉积光致抗蚀剂层，在光致抗蚀剂层的曝光区域上施加光束， 通过调制由每个曝光区域接收的曝光剂量来校正光致抗蚀剂层的显影以形成所述图案。 校正还包括确定包含至少一个子分解特征的取代图案（11），并且使用取代图案（11）来确定当施加电子束时要暴露的区域。 此外，调制考虑了靠近每个暴露区域的取代图案（11）的密度。

公开(公告)号：US06807662B2

公开(公告)日：2004-10-19

申请号：US10192186

申请日：2002-07-09

Applicant: Olivier Toublan ,  Serdar Manakli ,  Yorick Trouiller

Inventor： Olivier Toublan ,  Serdar Manakli ,  Yorick Trouiller

IPC: G06F1750

CPC classification number: G03F7/203 ,  G03F1/32 ,  G03F1/36 ,  G03F1/70

Abstract: An initial layout of an integrated circuit device is separated into a set of definitions for use in a multiple exposure fabrication process. The separation begins with reading a portion of the initial layout and identifying one or more target features within the initial layout. Further, a first revised layout definition is created for a first mask and a second revised layout definition is created for a second mask. The first revised layout definition includes the target features inside the dark-field content. In addition, in one embodiment, the first revised layout definition includes clear areas around each target feature. The second layout definition includes one or more dark features inside the bright-field content. These dark features, when used in the multiple exposure fabrication process, will overlap the target features. The first and second masks may be binary masks, attenuated phase-shifting masks (PSMs) or a combination of a binary mask and an attenuated PSM.

Abstract translation: 将集成电路器件的初始布局分成用于多次曝光制造工艺中的一组定义。 分离开始于读取初始布局的一部分并且识别初始布局中的一个或多个目标特征。 此外，为第一掩模创建第一修订的布局定义，并为第二掩模创建第二修订布局定义。 第一个修订的布局定义包括暗场内容中的目标特征。 此外，在一个实施例中，第一修订布局定义包括围绕每个目标特征的清晰区域。 第二布局定义包括明场内容内的一个或多个暗特征。 当在多重曝光制造过程中使用时，这些黑暗特征将与目标特征重叠。 第一和第二掩模可以是二进制掩模，衰减相移掩模（PSM）或二进制掩码和衰减PSM的组合。

公开(公告)号：US09235132B2

公开(公告)日：2016-01-12

申请号：US13641125

申请日：2011-04-13

Applicant: Serdar Manakli

Inventor： Serdar Manakli

IPC: G03B27/32 ,  G03B27/54 ,  G03C5/00 ,  G21G5/00 ,  H01J3/14 ,  G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/317

CPC classification number: G03F7/70091 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31776 ,  Y10S430/143

Abstract: A lithography method based on the projection of cells, notably direct-write electron-beam lithography. One of the main limitations of the methods of this type in the prior art is the writing time. To overcome this limitation, according to the method of the invention, the size of the cells is increased to the maximum aperture of the lithography device. Advantageously, this size increase is obtained by modifying the size of the apertures of the projection stencil level closest to the substrate to be etched. Advantageously, a strip is added to the outside of the block to be etched onto which is radiated a dose calculated to optimize the process energy latitude. Advantageously, this strip is spaced apart from the edge of the block to be etched. Advantageously, the projected cells are not adjoining.

Abstract translation: 基于电池投影的光刻方法，特别是直写式电子束光刻技术。 在现有技术中这种类型的方法的主要限制之一是写入时间。 为了克服这个限制，根据本发明的方法，电池的尺寸增加到光刻装置的最大孔径。 有利地，通过改变最接近待蚀刻的基底的突起模板水平面的尺寸来获得这种尺寸增加。 有利的是，将带材加到要蚀刻的块的外部，辐射剂量被计算以优化过程能量纬度。 有利地，该条带与被蚀刻块的边缘间隔开。 有利地，投影单元不相邻。