Wideband low-noise amplifier
    1.
    发明授权
    Wideband low-noise amplifier 有权
    宽带低噪声放大器

    公开(公告)号:US07884673B2

    公开(公告)日:2011-02-08

    申请号:US12423764

    申请日:2009-04-14

    IPC分类号: H03F3/04

    摘要: A wideband low-noise amplifier includes a source-degenerated common-source amplifier, a common-gate amplifier, and a matching frequency band determiner. The source-degenerated common-source amplifier is configured to amplify an input signal to output a first signal that is opposite in phase to the input signal. The common-gate amplifier is connected in parallel to the source-degenerated common-source amplifier to amplify the input signal to output a second signal that has the same phase as the input signal. The matching frequency band determiner is configured to isolate an input terminal of the source-degenerated common-source amplifier and an input terminal of the common-gate amplifier and determine a matching frequency band.

    摘要翻译: 宽带低噪声放大器包括源极退化的共源放大器,共栅放大器和匹配的频带确定器。 源极退化的共源放大器被配置为放大输入信号以输出与输入信号相位相反的第一信号。 共栅放大器与源极简并公共源放大器并联连接,以放大输入信号以输出与输入信号具有相同相位的第二信号。 匹配频带确定器被配置为隔离源极退化的共源极放大器的输入端和公共栅极放大器的输入端,并确定匹配的频带。

    Internal hole filler of abutment for implant

    公开(公告)号:US11433003B2

    公开(公告)日:2022-09-06

    申请号:US16642394

    申请日:2018-08-27

    申请人: Jae Young Kim

    发明人: Jae Young Kim

    IPC分类号: A61K6/58

    摘要: The present invention relates to an internal hole filler of an abutment for implant, which includes first polytetrafluoroethylene (first PTFE) and second polytetrafluoroethylene (second PTFE), wherein tensile strength measured after sintering the first PTFE is in a range of 20 MPa or more to less than 28 MPa, and tensile strength measured after sintering the second PTFE is 28 MPa or more, and a method of filling an internal hole of the abutment for implant.

    BLOCK-CODED GROUP MODULATION METHOD AND TRANSMITTER/RECEIVER USING THE SAME
    4.
    发明申请
    BLOCK-CODED GROUP MODULATION METHOD AND TRANSMITTER/RECEIVER USING THE SAME 审中-公开
    使用块编码组调制方法和发射机/接收机

    公开(公告)号:US20110116568A1

    公开(公告)日:2011-05-19

    申请号:US12897144

    申请日:2010-10-04

    IPC分类号: H04L27/00 H04L27/06 H03M5/00

    摘要: A block-coded group modulation method includes generating a symbol by grouping at least one bit of a data bit stream into one group, classifying the symbol into an n number of sections, and generating an n number of initial information bits. Next, the method includes setting up the size of a pulse corresponding to signal energy transmitted through each of the n sections, generating an additional information bit on the basis of the number of cases according to the sequence of the energy sizes, and generating final information bits by inserting the additional information bit into the initial information bits.

    摘要翻译: 块编码组调制方法包括通过将数据比特流的至少一个比特分组成一个组来生成符号,将该符号分类为n个部分,以及生成n个初始信息比特。 接下来,该方法包括设置与通过n个部分中的每一个传输的信号能量对应的脉冲的大小,根据能量大小的顺序根据情况数产生附加信息位,并产生最终信息 将附加信息位插入到初始信息位中。

    LOW POWER UWB TRANSMITTER AND RECEIVER IN IMPULSE-BASED UWB COMMUNICATION SYSTEM AND METHOD FOR OPERATING THE SAME
    5.
    发明申请
    LOW POWER UWB TRANSMITTER AND RECEIVER IN IMPULSE-BASED UWB COMMUNICATION SYSTEM AND METHOD FOR OPERATING THE SAME 审中-公开
    基于IMPULSE的UWB通信系统中的低功率UWB发射机和接收机及其操作方法

    公开(公告)号:US20100220774A1

    公开(公告)日:2010-09-02

    申请号:US12681479

    申请日:2008-07-11

    IPC分类号: H04L5/16 H04L27/00

    CPC分类号: H04B1/71637 H04B1/71635

    摘要: Provided are an ultra wideband (UWB) system and a method for operating the same. The UWB system includes a baseband unit for modulating/demodulating an impulse data signal and generating a power management control signal using burst hopping information, and an RF transmitting/receiving unit for transmitting/receiving a wireless signal and alternating between power-on/off states according to the power management control signal generated from the baseband unit. The UWB system can reduce power consumption by applying power source to the RF transmitting/receiving unit only at a time interval in which an impulse signal having a short time period and constituting transmitting/receiving data exists.

    摘要翻译: 提供了一种超宽带(UWB)系统及其操作方法。 UWB系统包括用于调制/解调脉冲数据信号并使用突发跳变信息产生功率管理控制信号的基带单元,以及用于发送/接收无线信号并在上电/断电状态之间交替的RF发送/接收单元 根据从基带单元产生的功率管理控制信号。 UWB系统可以仅在具有短时间段并且构成发送/接收数据的脉冲信号存在的时间间隔向RF发送/接收单元施加电源来降低功耗。

    SAMPLING DEVICE AND METHOD IN WIRELESS COMMUNICATION SYSTEM
    6.
    发明申请
    SAMPLING DEVICE AND METHOD IN WIRELESS COMMUNICATION SYSTEM 审中-公开
    无线通信系统中的采样设备和方法

    公开(公告)号:US20100150219A1

    公开(公告)日:2010-06-17

    申请号:US12549864

    申请日:2009-08-28

    IPC分类号: H04B17/00

    摘要: The exemplary embodiment of present invention provides a sampling device and method in a wireless communication system that is capable of precisely measuring a distance by combining data blocks passing through at least two delay paths and performing sampling thereon.To this end, the sampling device includes: a delayer that delays received signals in a block unit; a delay path selector that selects any one of a plurality of delay paths to control the delayer to apply the selected delay path to each block; a sampler that performs sampling for each block delayed by the delayer; a signal processor that combines at least two sampling blocks sampled by the sampler; and a timing tracker that tracks reception timing of the combined signal, wherein the delayer includes at least two selectable delay paths.

    摘要翻译: 本发明的示例性实施例提供了一种无线通信系统中的采样装置和方法,其能够通过组合经过至少两个延迟路径的数据块并在其上执行采样来精确地测量距离。 为此,采样装置包括:以块为单位延迟接收信号的延迟器; 延迟路径选择器,其选择多个延迟路径中的任何一个来控制所述延迟器将所选择的延迟路径应用于每个块; 对由延迟器延迟的每个块执行采样的采样器; 信号处理器,其组合由采样器采样的至少两个采样块; 以及跟踪所述组合信号的接收定时的定时跟踪器,其中所述延迟器包括至少两个可选延迟路径。

    Corrective Device for Ingrown Toenail and Incurvated Toenail
    7.
    发明申请
    Corrective Device for Ingrown Toenail and Incurvated Toenail 审中-公开
    纠正装置,用于内嵌的脚趾甲和被歪斜的脚趾甲

    公开(公告)号:US20090204045A1

    公开(公告)日:2009-08-13

    申请号:US12094640

    申请日:2007-09-28

    申请人: Jae Young Kim

    发明人: Jae Young Kim

    IPC分类号: A61F5/01

    CPC分类号: A61F5/11

    摘要: Provided is a corrective device for ingrown toenails and incurvated toenails. The corrective device includes a central member made of a shape-memory alloy; and prefabricated toenail side-engaging parts, each being attached to both ends of the central member. The corrective device of the present invention has advantages such as provision of strong corrective force over the entire toenail, convenient use, suitability for long-term use, straight growth of a toenail that will grow after a surgical treatment of the ingrown toenail, and straightening of a curved toenail.

    摘要翻译: 提供了一种用于内嵌脚趾甲和修剪脚趾甲的矫正装置。 校正装置包括由形状记忆合金制成的中心构件; 和预制的趾甲侧接合部分,每个都附接到中心构件的两端。 本发明的矫正装置具有以下优点,例如在整个脚趾甲上提供强矫正力,方便使用,长期使用适用性,在内向趾甲外科治疗后将生长的趾甲直线生长以及矫直 一个弯曲的脚趾甲。

    Method of manufacturing semiconductor device
    8.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US07223661B2

    公开(公告)日:2007-05-29

    申请号:US11120531

    申请日:2005-05-02

    IPC分类号: H01L21/461 H01L21/302

    摘要: The method includes forming an isolation film on a silicon substrate to define an active region; forming an antireflective film on an entire surface of the substrate containing the isolation film; forming a photosensitive film pattern on the antireflective film while exposing a portion of the isolation film or the active region adjacent to the isolation film; etching the antireflective film, the isolation film, and the substrate by using the photosensitive film pattern as an etching mask to recess the active region; performing a light etch treatment on a substrate resultant without removing the remaining photosensitive film pattern, so as to remove a damaged layer and a carbon pollutant formed on a surface of the recessed active region; and removing the remaining photosensitive film pattern and the antireflective film.

    摘要翻译: 该方法包括在硅衬底上形成隔离膜以限定有源区; 在包含隔离膜的基板的整个表面上形成抗反射膜; 在防反射膜上形成感光膜图案,同时使隔离膜的一部分或邻近隔离膜的有源区域暴露; 通过使用感光膜图案作为蚀刻掩模来蚀刻抗反射膜,隔离膜和基板以使有源区域凹陷; 对基板结果进行光蚀刻处理,而不去除剩余的感光膜图案,以去除在凹入的有源区域的表面上形成的损伤层和碳污染物; 并除去剩余的感光膜图案和抗反射膜。

    Semiconductor device and method for manufacturing the same
    9.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08659111B2

    公开(公告)日:2014-02-25

    申请号:US13327614

    申请日:2011-12-15

    IPC分类号: H01L21/70

    摘要: A semiconductor device is manufactured by etching a semiconductor substrate including an active region, forming a bit line contact hole from which the active region is protruded, forming a first spacer exposing a top of the active region at each of an inner wall and a bottom of the bit line contact hole, forming a bit line contact plug and a bit line over the exposed active region, and forming a second spacer over the semiconductor substrate including not only the bit line contact plug but also the bit line.

    摘要翻译: 通过蚀刻包括有源区域的半导体衬底来制造半导体器件,形成有源区域突出的位线接触孔,形成在第一间隔件的内壁和底部的每一个处形成有源区的顶部 位线接触孔,在暴露的有源区域上形成位线接触插塞和位线,以及在半导体衬底上形成第二间隔物,其不仅包括位线接触插塞,而且包括位线。