公开(公告)号：US20060270575A1

公开(公告)日：2006-11-30

申请号：US11502011

申请日：2006-08-10

申请人： Sang-Yong Kim ,  Sang-Jun Choi ,  Chang-Ki Hong

发明人： Sang-Yong Kim ,  Sang-Jun Choi ,  Chang-Ki Hong

IPC分类号： G03F7/42

CPC分类号： C23F1/16 ,  C11D3/042 ,  C11D7/08 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76805 ,  H01L21/76814

摘要： A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the foreign bodies can be substantially removed from the surface of the substrate without corroding a metal.

公开(公告)号：US20060042722A1

公开(公告)日：2006-03-02

申请号：US11158912

申请日：2005-06-22

申请人： Sang-Yong Kim ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Gwan Shim

发明人： Sang-Yong Kim ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Gwan Shim

IPC分类号： B65B1/04

CPC分类号： H01L21/67051 ,  H01L21/67034

摘要： An apparatus for drying a substrate using the Marangoni effect is disclosed. The apparatus includes a rotatable supporting portion on which a substrate is placed. A first nozzle for supplying de-ionized water and a second nozzle for supplying isopropyl alcohol vapor are provided on the supporting portion. When the isopropyl alcohol vapor is supplied to the center of the substrate at the initial stage, the amount of alcohol that reaches the substrate is controlled by a controlling portion such that the amount of the second liquid gradually increases.

摘要翻译： 公开了一种使用Marangoni效应对基板进行干燥的装置。 该装置包括可旋转的支撑部分，放置基板。 用于提供去离子水的第一喷嘴和用于提供异丙醇蒸气的第二喷嘴设置在支撑部分上。 当在初始阶段将异丙醇蒸汽供应到基材的中心时，通过控制部分控制到达基板的醇的量，使得第二液体的量逐渐增加。

公开(公告)号：US07435644B2

公开(公告)日：2008-10-14

申请号：US11329577

申请日：2006-01-11

申请人： Woo-Gwan Shim ,  Jung-Min Oh ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Sang-Yong Kim

发明人： Woo-Gwan Shim ,  Jung-Min Oh ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Sang-Yong Kim

IPC分类号： H01L21/8242

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： Provided is a method of manufacturing a capacitor of a semiconductor device, which can prevent tilting or an electrical short of a lower electrode. In the method, a mesh-type bridge insulating layer is formed above the contact plug on a mold oxide layer. The mold oxide layer and the bridge insulating layer are etched to define an electrode region. The mold oxide layer is removed using an etching gas having an etch selectivity of 500 or greater for the mold oxide layer with respect to the bridge insulating layer.

摘要翻译： 提供一种制造半导体器件的电容器的方法，其可以防止下电极的倾斜或电短路。 在该方法中，在模具氧化物层上的接触插塞上方形成网状桥接绝缘层。 蚀刻模具氧化物层和桥接绝缘层以限定电极区域。 使用相对于桥接绝缘层的模具氧化物层的蚀刻选择性为500以上的蚀刻气体去除模具氧化物层。

公开(公告)号：US20060189148A1

公开(公告)日：2006-08-24

申请号：US11358082

申请日：2006-02-22

申请人： Sang-Yong Kim ,  Ji-Hoon Cha ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

发明人： Sang-Yong Kim ,  Ji-Hoon Cha ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

IPC分类号： H01L21/302 ,  C09K13/00 ,  H01L29/94

CPC分类号： H01L21/32134 ,  C09K13/02 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.

摘要翻译： 提供具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法。 可以在半导体衬底上形成栅极绝缘层和/或金属氮化物层。 掩模层可以形成在金属氮化物层上。 使用掩模层作为蚀刻掩模，可以对金属氮化物层进行蚀刻处理，形成金属氮化物层图案。 可以具有氧化剂，螯合剂和/或pH调节混合物的蚀刻剂可以进行蚀刻。 在形成晶体管期间，这些方法可以减少金属氮化物层图案下的栅极绝缘层的蚀刻损伤。

公开(公告)号：US07322385B2

公开(公告)日：2008-01-29

申请号：US11158912

申请日：2005-06-22

申请人： Sang-Yong Kim ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Gwan Shim

发明人： Sang-Yong Kim ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Gwan Shim

IPC分类号： B65B1/04

CPC分类号： H01L21/67051 ,  H01L21/67034

摘要： An apparatus for drying a substrate using the Marangoni effect is disclosed. The apparatus includes a rotatable supporting portion on which a substrate is placed. A first nozzle for supplying de-ionized water and a second nozzle for supplying isopropyl alcohol vapor are provided on the supporting portion. When the isopropyl alcohol vapor is supplied to the center of the substrate at the initial stage, the amount of alcohol that reaches the substrate is controlled by a controlling portion such that the amount of the second liquid gradually increases.

摘要翻译： 公开了一种使用Marangoni效应对基板进行干燥的装置。 该装置包括可旋转的支撑部分，放置基板。 用于提供去离子水的第一喷嘴和用于提供异丙醇蒸气的第二喷嘴设置在支撑部分上。 当在初始阶段将异丙醇蒸汽供应到基材的中心时，通过控制部分控制到达基板的醇的量，使得第二液体的量逐渐增加。

公开(公告)号：US07105475B2

公开(公告)日：2006-09-12

申请号：US10859815

申请日：2004-06-03

申请人： Sang-Yong Kim ,  Sang-Jun Choi ,  Chang-Ki Hong

发明人： Sang-Yong Kim ,  Sang-Jun Choi ,  Chang-Ki Hong

IPC分类号： C11D1/00 ,  C11D3/02 ,  C11D3/24 ,  C11D3/20

CPC分类号： C23F1/16 ,  C11D3/042 ,  C11D7/08 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76805 ,  H01L21/76814

摘要： A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the foreign bodies can be substantially removed from the surface of the substrate without corroding a metal.

公开(公告)号：US20060172907A1

公开(公告)日：2006-08-03

申请号：US11341412

申请日：2006-01-30

申请人： Sang-Yong Kim ,  Ji-Hoon Cha ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Gwan Shim ,  Kui-Jong Baek ,  Sung-Bae Kim ,  Hyun-Tak Kim ,  Sang-Won Lee ,  Woong Han ,  Jung-Hun Lim

发明人： Sang-Yong Kim ,  Ji-Hoon Cha ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Woo-Gwan Shim ,  Kui-Jong Baek ,  Sung-Bae Kim ,  Hyun-Tak Kim ,  Sang-Won Lee ,  Woong Han ,  Jung-Hun Lim

IPC分类号： C11D7/32

CPC分类号： C11D3/042 ,  C11D3/30 ,  C11D3/33 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D11/0047

摘要： According to an example embodiment of the present invention, the microelectronic cleaning agent may include a fluoride component, an acid component, a chelating agent, a surfactant and water. Example embodiments of the present invention provide a microelectronic cleaning agent which can selectively remove, for example, a high-k dielectric layer. The microelectronic cleaning agent includes from about 0.001 weight % to about 10 weight % of a fluoride component, from about 0.001 weight % to about 30 weight % of an acid component, from about 0.001 weight % to about 20 weight % of a chelating agent, from about 0.001 weight % to about 10 weight % of a surfactant, and water (H2O). The water may comprise the remainder of the cleaning agent. According to another embodiment of the present invention, a method of fabricating a semiconductor device using the microelectronic cleaning agent is also provided.

摘要翻译： 根据本发明的示例性实施方案，微电子清洗剂可以包括氟化物组分，酸组分，螯合剂，表面活性剂和水。 本发明的示例性实施方案提供了可以选择性地除去例如高k电介质层的微电子清洁剂。 微电子清洁剂包括约0.001重量％至约10重量％的氟化物组分，约0.001重量％至约30重量％的酸组分，约0.001重量％至约20重量％的螯合剂， 约0.001重量％至约10重量％的表面活性剂和水（H 2 O 2）。 水可以包括剩余的清洁剂。 根据本发明的另一实施例，还提供了使用微电子清洁剂制造半导体器件的方法。

公开(公告)号：US20060027252A1

公开(公告)日：2006-02-09

申请号：US11193088

申请日：2005-07-29

申请人： Chang-Sup Mun ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Hyung-Ho Ko ,  Sang-Yong Kim

发明人： Chang-Sup Mun ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Hyung-Ho Ko ,  Sang-Yong Kim

IPC分类号： B08B3/00

CPC分类号： B08B3/08 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/3212

摘要： The present invention provides methods of processing a substrate by contacting the substrate with an inorganic solution including an organic additive, rinsing the substrate with an organic alcohol, and rinsing the substrate with deionized water. Related substrates and devices are also disclosed.

摘要翻译： 本发明提供了通过使基材与包括有机添加剂的无机溶液接触，用有机醇漂洗该基材并用去离子水冲洗该基材来处理基材的方法。 还公开了相关的基板和装置。

公开(公告)号：US08637942B2

公开(公告)日：2014-01-28

申请号：US12461992

申请日：2009-08-31

申请人： Sang-Yong Kim ,  Ji-Hoon Cha ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

发明人： Sang-Yong Kim ,  Ji-Hoon Cha ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

IPC分类号： H01L29/78

CPC分类号： H01L21/32134 ,  C09K13/02 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.

摘要翻译： 提供具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法。 可以在半导体衬底上形成栅极绝缘层和/或金属氮化物层。 掩模层可以形成在金属氮化物层上。 使用掩模层作为蚀刻掩模，可以对金属氮化物层进行蚀刻处理，形成金属氮化物层图案。 可以具有氧化剂，螯合剂和/或pH调节混合物的蚀刻剂可以进行蚀刻。 在形成晶体管期间，这些方法可以减少金属氮化物层图案下的栅极绝缘层的蚀刻损伤。

公开(公告)号：US07700496B2

公开(公告)日：2010-04-20

申请号：US11358082

申请日：2006-02-22

申请人： Sang-Yong Kim ,  Ji-Hoon Cha ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

发明人： Sang-Yong Kim ,  Ji-Hoon Cha ,  Woo-Gwan Shim ,  Chang-Ki Hong ,  Sang-Jun Choi

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/32134 ,  C09K13/02 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.