公开(公告)号：US09443910B1

公开(公告)日：2016-09-13

申请号：US14795211

申请日：2015-07-09

Applicant: SanDisk 3D LLC

Inventor： Kan Fujiwara ,  Takuya Futase ,  Toshihiro Iizuka ,  Shin Kikuchi ,  Yoichiro Tanaka ,  Akio Nishida ,  Christopher J Petti

IPC: H01L27/115 ,  H01L27/24 ,  H01L45/00 ,  H01L21/822

CPC classification number: H01L27/2481 ,  H01L21/8221 ,  H01L27/2436 ,  H01L27/2454 ,  H01L27/249 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/1253 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608

Abstract: A three-dimensional (3D) non-volatile memory array having a silicide bit line and method of fabricating is disclosed. The fabrication technique may comprise forming a metal silicide for at least a portion of the bit line. The device has reversible resistivity material between the word lines and the bit lines. The reversible resistivity material may be a metal oxide. The metal that is used to form the silicide may serve as an oxygen scavenger to draw oxygen away from the silicon, thus preventing formation of silicon oxide between the reversible resistivity material and the bit line. The metal silicide may also help prevent formation of a depletion layer in silicon in the bit line.

Abstract translation: 公开了一种具有硅化物位线和制造方法的三维（3D）非易失性存储器阵列。 制造技术可以包括为位线的至少一部分形成金属硅化物。 该器件在字线和位线之间具有可逆电阻率材料。 可逆电阻率材料可以是金属氧化物。 用于形成硅化物的金属可以用作氧清除剂，以从氧中吸取氧，从而防止在可逆电阻率材料和位线之间形成氧化硅。 金属硅化物还可以帮助防止在位线中的硅中形成耗尽层。