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1.发明申请MEMORY CELLS HAVING STORAGE ELEMENTS THAT SHARE MATERIAL LAYERS WITH STEERING ELEMENTS AND METHODS OF FORMING THE SAME 有权具有与转向元件共享材料层的存储元件的存储单元及其形成方法公开(公告)号：US20140284538A1
公开(公告)日：2014-09-25
申请号：US14299240
申请日：2014-06-09
Applicant: SANDISK 3D LLC
Inventor： Yung-Tin Chen , Chuanbin Pan , Andrei Mihnea , Steven Maxwell , Kun Hou
CPC classification number: H01L45/146 , H01L27/2409 , H01L27/2418 , H01L27/2481 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1616 , Y10S438/957
Abstract: A memory cell is provided that includes a steering element, a metal-insulator-metal stack coupled in series with the steering element, and a conductor above the metal-insulator-metal stack. The steering element includes a diode having an n-region and a p-region. The metal-insulator-metal stack includes a reversible resistivity-switching material between a top electrode and a bottom electrode, and the top electrode includes a highly doped semiconductor material. The memory cell does not include a metal layer disposed between the metal-insulator-metal stack and the conductor. The bottom electrode includes the n-region or the p-region of the diode, and the reversible resistivity-switching material is directly adjacent the n-region or the p-region of the diode. Numerous other aspects are provided.
Abstract translation: 提供了一种存储单元，其包括转向元件，与转向元件串联耦合的金属 - 绝缘体 - 金属叠层以及金属 - 绝缘体 - 金属叠层上方的导体。 该转向元件包括具有n区和p区的二极管。 金属 - 绝缘体 - 金属堆叠包括在顶部电极和底部电极之间的可逆电阻率切换材料，并且顶部电极包括高度掺杂的半导体材料。 存储单元不包括设置在金属 - 绝缘体 - 金属叠层和导体之间的金属层。 底部电极包括二极管的n区域或p区域，并且可逆电阻率切换材料直接邻近二极管的n区域或p区域。 提供了许多其他方面。
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2.发明授权Memory cells having storage elements that share material layers with steering elements and methods of forming the same 有权具有与转向元件共享材料层的存储元件的存储单元及其形成方法公开(公告)号：US08969845B2
公开(公告)日：2015-03-03
申请号：US14299240
申请日：2014-06-09
Applicant: SanDisk 3D LLC
Inventor： Yung-Tin Chen , Chuanbin Pan , Andrei Mihnea , Steven Maxwell , Kun Hou
CPC classification number: H01L45/146 , H01L27/2409 , H01L27/2418 , H01L27/2481 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1616 , Y10S438/957
Abstract: A memory cell is provided that includes a steering element, a metal-insulator-metal stack coupled in series with the steering element, and a conductor above the metal-insulator-metal stack. The steering element includes a diode having an n-region and a p-region. The metal-insulator-metal stack includes a reversible resistivity-switching material between a top electrode and a bottom electrode, and the top electrode includes a highly doped semiconductor material. The memory cell does not include a metal layer disposed between the metal-insulator-metal stack and the conductor. The bottom electrode includes the n-region or the p-region of the diode, and the reversible resistivity-switching material is directly adjacent the n-region or the p-region of the diode. Numerous other aspects are provided.
Abstract translation: 提供了一种存储单元，其包括转向元件，与转向元件串联耦合的金属 - 绝缘体 - 金属叠层以及金属 - 绝缘体 - 金属叠层上方的导体。 该转向元件包括具有n区和p区的二极管。 金属 - 绝缘体 - 金属堆叠包括在顶部电极和底部电极之间的可逆电阻率切换材料，并且顶部电极包括高度掺杂的半导体材料。 存储单元不包括设置在金属 - 绝缘体 - 金属叠层和导体之间的金属层。 底部电极包括二极管的n区域或p区域，并且可逆电阻率切换材料直接邻近二极管的n区域或p区域。 提供了许多其他方面。
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3.发明授权Memory cells having storage elements that share material layers with steering elements and methods of forming the same 有权具有与转向元件共享材料层的存储元件的存储单元及其形成方法公开(公告)号：US08981331B2
公开(公告)日：2015-03-17
申请号：US13783585
申请日：2013-03-04
Applicant: SanDisk 3D LLC
Inventor： Yung-Tin Chen , Chuanbin Pan , Andrei Mihnea , Steven Maxwell , Kun Hou
IPC: H01L47/00 , H01L21/8238 , H01L45/00 , H01L27/24
CPC classification number: H01L45/146 , H01L27/2409 , H01L27/2418 , H01L27/2481 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1616 , Y10S438/957
Abstract: In some embodiments, a memory cell is provided that includes a metal-insulator-metal stack and a steering element coupled to the metal-insulator-metal stack. The metal-insulator-metal stack includes a first conductive layer, a reversible resistivity switching layer above the first conductive layer, and a second conductive layer above the reversible resistivity switching layer. The first conductive layer and/or the second conductive layer includes a first semiconductor material layer. The steering element includes the first semiconductor material layer. Numerous other aspects are provided.
Abstract translation: 在一些实施例中，提供了包括金属 - 绝缘体 - 金属堆叠和耦合到金属 - 绝缘体 - 金属堆叠的操纵元件的存储单元。 金属 - 绝缘体 - 金属堆叠包括第一导电层，第一导电层上方的可逆电阻率开关层和可逆电阻率切换层上方的第二导电层。 第一导电层和/或第二导电层包括第一半导体材料层。 该转向元件包括第一半导体材料层。 提供了许多其他方面。
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4.发明申请MEMORY CELLS HAVING STORAGE ELEMENTS THAT SHARE MATERIAL LAYERS WITH STEERING ELEMENTS AND METHODS OF FORMING THE SAME 有权具有与转向元件共享材料层的存储元件的存储单元及其形成方法公开(公告)号：US20130175492A1
公开(公告)日：2013-07-11
申请号：US13783585
申请日：2013-03-04
Applicant: SanDisk 3D LLC
Inventor： Yung-Tin Chen , Chuanbin Pan , Andrei Mihnea , Steven Maxwell , Kun Hou
IPC: H01L45/00
CPC classification number: H01L45/146 , H01L27/2409 , H01L27/2418 , H01L27/2481 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1616 , Y10S438/957
Abstract: In some embodiments, a memory cell is provided that includes a metal-insulator-metal stack and a steering element coupled to the metal-insulator-metal stack. The metal-insulator-metal stack includes a first conductive layer, a reversible resistivity switching layer above the first conductive layer, and a second conductive layer above the reversible resistivity switching layer. The first conductive layer and/or the second conductive layer includes a first semiconductor material layer. The steering element includes the first semiconductor material layer. Numerous other aspects are provided.
Abstract translation: 在一些实施例中，提供了包括金属 - 绝缘体 - 金属堆叠和耦合到金属 - 绝缘体 - 金属堆叠的操纵元件的存储单元。 金属 - 绝缘体 - 金属堆叠包括第一导电层，第一导电层上方的可逆电阻率开关层和可逆电阻率切换层上方的第二导电层。 第一导电层和/或第二导电层包括第一半导体材料层。 该转向元件包括第一半导体材料层。 提供了许多其他方面。
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