公开(公告)号：US09966914B2

公开(公告)日：2018-05-08

申请号：US13875630

申请日：2013-05-02

Applicant: Samsung Electronics Co. Ltd.

Inventor： Jaehyun Kim ,  Misun Kim ,  Kyungseok Oh ,  Sanghoon Oh

IPC: H03G3/00 ,  H03G3/30 ,  G10L21/0324

CPC classification number: H03G3/00 ,  G10L21/0324 ,  H03G3/3005 ,  H03G3/3089

Abstract: A method of processing an audio signal is provided. The method includes receiving at least one digital audio stream from at least one audio source, applying at least one gain value to each of the at least one digital audio stream by a gain adjustment unit, mixing the at least one digital audio stream to which the at least one gain value has been applied, calculating a representative gain value from the at least one gain value, calculating an extra valid headroom based on the representative gain value for correction of the mixed at least one digital audio stream, and post-processing the mixed at least one digital audio stream using the extra valid headroom.

公开(公告)号：US09894441B2

公开(公告)日：2018-02-13

申请号：US15355732

申请日：2016-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoungho Bang ,  Yangsu Kim ,  Kyungseok Oh ,  Juntai Kim ,  Gunhyuk Yoon ,  Chulmin Choi

IPC: H04R3/04 ,  H04R29/00 ,  H04R3/00 ,  A61B5/12 ,  G06F3/16 ,  G10L21/0232 ,  H04R25/00

CPC classification number: H04R3/04 ,  A61B5/123 ,  G06F3/165 ,  G10L21/0232 ,  H04R3/00 ,  H04R25/70 ,  H04R29/00 ,  H04R2420/07 ,  H04R2430/03 ,  H04R2499/11

Abstract: A method and an apparatus for customizing audio data processing are provided. The method includes receiving audio data through a wireless communication channel from an external device; decoding the received audio data; reducing noise of the decoded audio data; identifying hearing characteristics of a user by testing hearing abilities of the user at a plurality of frequency bands; adjusting a dynamic range of each of the plurality of frequency bands based on the hearing characteristics; processing the noise-reduced audio data based on the adjusted dynamic range of each of the plurality of frequency bands; and outputting the processed audio data.

公开(公告)号：US20140073125A1

公开(公告)日：2014-03-13

申请号：US13798700

申请日：2013-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shinhye Kim ,  Sangho Rha ,  Jeong-Kyu Lee ,  Zulkarnain ,  Kyungseok Oh ,  Sangbom Kang ,  Seungjae Lee ,  Jungchan Lee

IPC: H01L29/66

CPC classification number: H01L29/66666 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76837 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/517 ,  H01L29/66545

Abstract: A semiconductor device is manufactured using an expandable material. The method includes forming a first gate insulating layer on a substrate, forming first and second gate structures on the first gate insulating layer, the first and second gate structures being spaced apart from each other at a distance, forming an expandable material on sidewalls and upper surfaces of the first and second gate structures, forming a gap-fill layer on the expandable material between the first and second gate structures, and performing a heat-treatment process to increase the volume of the expandable material.

Abstract translation: 使用可膨胀材料制造半导体器件。 该方法包括在衬底上形成第一栅极绝缘层，在第一栅极绝缘层上形成第一和第二栅极结构，第一和第二栅极结构彼此间隔一定距离，在侧壁和上部形成可膨胀材料 第一和第二栅极结构的表面，在第一和第二栅极结构之间的可膨胀材料上形成间隙填充层，并且执行热处理工艺以增加可膨胀材料的体积。

公开(公告)号：US09847245B1

公开(公告)日：2017-12-19

申请号：US15343151

申请日：2016-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jorge A. Kittl ,  Kyungseok Oh ,  Sung Min Kim

IPC: H01L21/762 ,  H01L21/306 ,  H01L21/324

CPC classification number: H01L21/76205 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/76224

Abstract: A method of filling cavities in a semiconductor structure during fabrication. A layer of a first material, e.g., a polysilazane, is deposited on the semiconductor, and subjected to a first thermal process to change its chemical composition, e.g., to change it to silicon dioxide. It is then etched back, and the cycle of deposition, and thermal processing is repeated. The etch-back may also be repeated in one or more of the cycles after the first cycle, and a second thermal process, that may increase the density of one or more of the deposited layers, may be performed in one or more of the cycles.

公开(公告)号：US09532154B2

公开(公告)日：2016-12-27

申请号：US14034016

申请日：2013-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoungho Bang ,  Yangsu Kim ,  Kyungseok Oh ,  Juntai Kim ,  Gunhyuk Yoon ,  Chulmin Choi

IPC: H03G5/00 ,  H04R29/00 ,  H04R3/00 ,  A61B5/12 ,  H04R25/00

CPC classification number: H04R3/04 ,  A61B5/123 ,  G06F3/165 ,  G10L21/0232 ,  H04R3/00 ,  H04R25/70 ,  H04R29/00 ,  H04R2420/07 ,  H04R2430/03 ,  H04R2499/11

Abstract: A method and apparatus for customizing audio signal processing for a user by a mobile device is provided. The method includes identifying hearing characteristics of the user by testing hearing abilities of the user, by the mobile device, at a plurality of frequencies; adjusting a dynamic range of each of the plurality of frequencies based on the hearing characteristics; processing a decoded audio signal based on the adjusted dynamic range of each of the plurality of frequencies; and outputting the processed audio signal.

Abstract translation: 提供了一种用于由移动设备定制用户的音频信号处理的方法和装置。 该方法包括通过以多个频率测试移动设备的用户的听觉能力来识别用户的听觉特征; 基于听觉特征来调整多个频率中的每一个的动态范围; 基于所述多个频率中的每一个的调整的动态范围来处理解码的音频信号; 并输出经处理的音频信号。

公开(公告)号：US20170365505A1

公开(公告)日：2017-12-21

申请号：US15343151

申请日：2016-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jorge A. Kittl ,  Kyungseok Oh ,  Sung Min Kim

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/306

CPC classification number: H01L21/76205 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/76224

Abstract: A method of filling cavities in a semiconductor structure during fabrication. A layer of a first material, e.g., a polysilazane, is deposited on the semiconductor, and subjected to a first thermal process to change its chemical composition, e.g., to change it to silicon dioxide. It is then etched back, and the cycle of deposition, and thermal processing is repeated. The etch-back may also be repeated in one or more of the cycles after the first cycle, and a second thermal process, that may increase the density of one or more of the deposited layers, may be performed in one or more of the cycles.

公开(公告)号：US08906761B2

公开(公告)日：2014-12-09

申请号：US13798700

申请日：2013-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shinhye Kim ,  Sangho Rha ,  Jeong-Kyu Lee ,  Zulkarnain ,  Kyungseok Oh ,  Sangbom Kang ,  Seungjae Lee ,  Jungchan Lee

IPC: H01L29/739 ,  H01L29/66

CPC classification number: H01L29/66666 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76837 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/517 ,  H01L29/66545

Abstract: A semiconductor device is manufactured using an expandable material. The method includes forming a first gate insulating layer on a substrate, forming first and second gate structures on the first gate insulating layer, the first and second gate structures being spaced apart from each other at a distance, forming an expandable material on sidewalls and upper surfaces of the first and second gate structures, forming a gap-fill layer on the expandable material between the first and second gate structures, and performing a heat-treatment process to increase the volume of the expandable material.

Abstract translation: 使用可膨胀材料制造半导体器件。 该方法包括在衬底上形成第一栅极绝缘层，在第一栅极绝缘层上形成第一和第二栅极结构，第一和第二栅极结构彼此间隔一定距离，在侧壁和上部形成可膨胀材料 第一和第二栅极结构的表面，在第一和第二栅极结构之间的可膨胀材料上形成间隙填充层，并且执行热处理工艺以增加可膨胀材料的体积。