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    DEPTH PIXEL HAVING MULTI-TAP STRUCTURE AND TIME-OF-FLIGHT SENSOR INCLUDING THE SAME
    1.
    发明申请
    DEPTH PIXEL HAVING MULTI-TAP STRUCTURE AND TIME-OF-FLIGHT SENSOR INCLUDING THE SAME 有权

    公开(公告)号：US20220021831A1

    公开(公告)日：2022-01-20

    申请号：US17173290

    申请日：2021-02-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Younggu Jin ,  Youngchan Kim ,  Youngsun Oh

    IPC: H04N5/369 ,  H04N5/341 ,  G01S17/894 ,  G01S7/4863 ,  G01S7/4865

    Abstract: A depth pixel of a time-of-flight (ToF) sensor includes a common photogate disposed in a center region of the depth pixel, a plurality of floating diffusion regions disposed in a peripheral region surrounding the center region, a plurality of demodulation transfer gates disposed in the peripheral region, and a plurality of overflow gates disposed in the peripheral region. The demodulation transfer gates transfer a photo charge collected by the common photogate to the plurality of floating diffusion regions. The demodulation transfer gates are symmetric with respect to each of a horizontal line and a vertical line that pass through a center of the depth pixel and are substantially perpendicular to each other. The overflow gates drain the photo charge collected by the common photogate, and are symmetric with respect to each of the horizontal line and the vertical line.

    IMAGE SENSOR AND METHOD OF OPERATING THE SAME
    3.
    发明申请
    IMAGE SENSOR AND METHOD OF OPERATING THE SAME 有权

    公开(公告)号：US20220360731A1

    公开(公告)日：2022-11-10

    申请号：US17673390

    申请日：2022-02-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Munhwan Kim ,  Youngsun Oh ,  Jongyoon Shin ,  Honghyun Jeon ,  Hana Choi

    IPC: H04N5/374 ,  H01L27/146 ,  H04N5/378 ,  H04N5/369 ,  H04N9/04 ,  H04N5/3745

    Abstract: An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.

    Image sensor and method of operating the same
    4.
    发明授权
    Image sensor and method of operating the same 有权

    公开(公告)号：US12225311B2

    公开(公告)日：2025-02-11

    申请号：US18482233

    申请日：2023-10-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Munhwan Kim ,  Youngsun Oh ,  Jongyoon Shin ,  Honghyun Jeon ,  Hana Choi

    IPC: H04N25/766 ,  H01L27/146 ,  H04N25/11 ,  H04N25/75 ,  H04N25/778 ,  H04N25/79

    Abstract: An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.

    Image sensor
    5.
    发明授权
    Image sensor 有权

    公开(公告)号：US11665443B2

    公开(公告)日：2023-05-30

    申请号：US17674045

    申请日：2022-02-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Youngsun Oh ,  Hyungjin Bae ,  Moosup Lim

    IPC: H04N25/585 ,  H04N25/75 ,  H04N25/77

    CPC classification number: H04N25/585 ,  H04N25/75 ,  H04N25/77

    Abstract: An image sensor including a pixel that includes: a first photodiode; a second photodiode having a larger light-receiving area than the first photodiode; a first floating diffusion node accumulating charges of the first photodiode; a second floating diffusion node accumulating charges of the second photodiode; a capacitor accumulating charges overflowing from the first photodiode; a first switch transistor having a first end connected to the first floating diffusion node and a second end connected to the capacitor; and a driving transistor configured to convert the accumulated charges into a pixel signal, the first switch transistor is turned on in a low conversion gain (LCG) mode of a readout section of the first photodiode, and is turned off in a high conversion gain (HCG) mode of the readout section of the first photodiode, and the readout circuit generates image data based on pixel signals from the first and second sections.

    Image sensor and operating method
    6.
    发明授权
    Image sensor and operating method 有权

    公开(公告)号：US11552122B2

    公开(公告)日：2023-01-10

    申请号：US16865618

    申请日：2020-05-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Munhwan Kim ,  Youngsun Oh

    IPC: H01L27/146 ,  H04N5/374 ,  H04N5/355 ,  H04N5/378 ,  H04N5/3745

    Abstract: An image sensor includes unit pixels of a first pixel group sharing a first floating diffusion region and associated with a single color filter, and unit pixels of a second pixel group sharing a second floating diffusion region and associated with the single color filter. Control logic may generate an image by obtaining capacitance having a first value from the first floating diffusion region at a first time, and obtaining capacitance having a second value different from the first value from the second floating diffusion region at a second time following the first time. The first pixel group and the second pixel s group have different sensitivity levels.

    Image sensor
    7.
    发明授权
    Image sensor 有权

    公开(公告)号：US12176376B2

    公开(公告)日：2024-12-24

    申请号：US17533468

    申请日：2021-11-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Junghoon Park ,  Hyungjin Bae ,  Seungho Shin ,  Youngsun Oh ,  Moosup Lim

    IPC: H01L27/146

    Abstract: An image sensor includes a substrate including a first surface and a second surface facing the first surface, a first photodiode located in a first region of the substrate and generating photocharges from light incident on the first region, a second photodiode located in a second region of the substrate and generating photocharges from light incident on the second region, and an isolation structure defining the first region in which the first photodiode is located and the second region in which the second photodiode is located, and extending between the first photodiode and the second photodiode. An area of the second region is smaller than an area of the first region, a first end of the isolation structure is coplanar with the second surface, and the isolation structure extends in a vertical direction from the second surface of the substrate toward the first surface of the substrate.

    Depth pixel having multi-tap structure and time-of-flight sensor including the same
    8.
    发明授权
    Depth pixel having multi-tap structure and time-of-flight sensor including the same 有权

    公开(公告)号：US11627266B2

    公开(公告)日：2023-04-11

    申请号：US17173290

    申请日：2021-02-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Younggu Jin ,  Youngchan Kim ,  Youngsun Oh

    IPC: H04N5/369 ,  H04N5/341 ,  G01S7/4865 ,  G01S7/4863 ,  G01S17/894

    Abstract: A depth pixel of a time-of-flight (ToF) sensor includes a common photogate disposed in a center region of the depth pixel, a plurality of floating diffusion regions disposed in a peripheral region surrounding the center region, a plurality of demodulation transfer gates disposed in the peripheral region, and a plurality of overflow gates disposed in the peripheral region. The demodulation transfer gates transfer a photo charge collected by the common photogate to the plurality of floating diffusion regions. The demodulation transfer gates are symmetric with respect to each of a horizontal line and a vertical line that pass through a center of the depth pixel and are substantially perpendicular to each other. The overflow gates drain the photo charge collected by the common photogate, and are symmetric with respect to each of the horizontal line and the vertical line.

    IMAGE SENSOR
    10.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20250040266A1

    公开(公告)日：2025-01-30

    申请号：US18916887

    申请日：2024-10-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Junghoon Park ,  Hyungjin Bae ,  Seungho Shin ,  Youngsun Oh ,  Moosup Lim

    IPC: H01L27/146

    Abstract: An image sensor includes a substrate including a first surface and a second surface facing the first surface, a first photodiode located in a first region of the substrate and generating photocharges from light incident on the first region, a second photodiode located in a second region of the substrate and generating photocharges from light incident on the second region, and an isolation structure defining the first region in which the first photodiode is located and the second region in which the second photodiode is located, and extending between the first photodiode and the second photodiode. An area of the second region is smaller than an area of the first region, a first end of the isolation structure is coplanar with the second surface, and the isolation structure extends in a vertical direction from the second surface of the substrate toward the first surface of the substrate.

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