公开(公告)号：US11665443B2

公开(公告)日：2023-05-30

申请号：US17674045

申请日：2022-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngsun Oh ,  Hyungjin Bae ,  Moosup Lim

IPC: H04N25/585 ,  H04N25/75 ,  H04N25/77

CPC classification number: H04N25/585 ,  H04N25/75 ,  H04N25/77

Abstract: An image sensor including a pixel that includes: a first photodiode; a second photodiode having a larger light-receiving area than the first photodiode; a first floating diffusion node accumulating charges of the first photodiode; a second floating diffusion node accumulating charges of the second photodiode; a capacitor accumulating charges overflowing from the first photodiode; a first switch transistor having a first end connected to the first floating diffusion node and a second end connected to the capacitor; and a driving transistor configured to convert the accumulated charges into a pixel signal, the first switch transistor is turned on in a low conversion gain (LCG) mode of a readout section of the first photodiode, and is turned off in a high conversion gain (HCG) mode of the readout section of the first photodiode, and the readout circuit generates image data based on pixel signals from the first and second sections.

公开(公告)号：US12293549B2

公开(公告)日：2025-05-06

申请号：US17863522

申请日：2022-07-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjin Bae ,  Kwangmin Byeon ,  Seungbum Lee ,  Seungseok Hong

IPC: G06T7/90 ,  G06T7/55 ,  G06T7/70

Abstract: According to an embodiment, an electronic device for providing augmented reality and operating method includes: transmitting color information indicating colors of a plurality of pixels forming a first frame and depth information indicating depths of the plurality of pixels to a first external electronic device connected through the communication circuit; obtaining color information and depth information of a second frame following the first frame; calculating an amount of change of depth information of at least one object included in the first frame and the second frame based on the depth information of the first frame and the depth information of the second frame; and transmitting the depth information of the second frame together with the color information of the second frame to the first external electronic device based on that the amount of change of the depth information is greater than or equal to the specified depth threshold.

公开(公告)号：US11848338B2

公开(公告)日：2023-12-19

申请号：US17313601

申请日：2021-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunji Park ,  Hyungjin Bae ,  Moosup Lim ,  Seungho Shin ,  Kangsun Lee

IPC: H01L27/146 ,  H04N23/73 ,  H04N23/741 ,  H04N23/745

CPC classification number: H01L27/14605 ,  H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H04N23/73 ,  H04N23/741 ,  H04N23/745

Abstract: An image sensor includes a plurality of first photodiodes included in a first area of a unit pixel, and configured to generate electric charges, a second photodiode included in a second area of the unit pixel, and configured to generate electric charges, a first microlens disposed above the first area, a second microlens disposed above the second area, a first floating diffusion region included in the first area, a second floating diffusion region included in the second area, a plurality of first transfer transistors configured to provide the electric charges generated by the plurality of first photodiodes to the first floating diffusion region, and a second transfer transistor configured to provide the electric charges generated by the second photodiode to the second floating diffusion region. A sum of light-receiving areas of the plurality of first photodiodes is greater than a light-receiving area of the second photodiode.

公开(公告)号：US12176376B2

公开(公告)日：2024-12-24

申请号：US17533468

申请日：2021-11-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghoon Park ,  Hyungjin Bae ,  Seungho Shin ,  Youngsun Oh ,  Moosup Lim

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first surface and a second surface facing the first surface, a first photodiode located in a first region of the substrate and generating photocharges from light incident on the first region, a second photodiode located in a second region of the substrate and generating photocharges from light incident on the second region, and an isolation structure defining the first region in which the first photodiode is located and the second region in which the second photodiode is located, and extending between the first photodiode and the second photodiode. An area of the second region is smaller than an area of the first region, a first end of the isolation structure is coplanar with the second surface, and the isolation structure extends in a vertical direction from the second surface of the substrate toward the first surface of the substrate.

公开(公告)号：US20220123033A1

公开(公告)日：2022-04-21

申请号：US17313601

申请日：2021-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunji Park ,  Hyungjin Bae ,  Moosup Lim ,  Seungho Shin ,  Kangsun Lee

IPC: H01L27/146 ,  H04N5/235

Abstract: An image sensor includes a plurality of first photodiodes included in a first area of a unit pixel, and configured to generate electric charges, a second photodiode included in a second area of the unit pixel, and configured to generate electric charges, a first microlens disposed above the first area, a second microlens disposed above the second area, a first floating diffusion region included in the first area, a second floating diffusion region included in the second area, a plurality of first transfer transistors configured to provide the electric charges generated by the plurality of first photodiodes to the first floating diffusion region, and a second transfer transistor configured to provide the electric charges generated by the second photodiode to the second floating diffusion region. A sum of light-receiving areas of the plurality of first photodiodes is greater than a light-receiving area of the second photodiode.

公开(公告)号：US20250040266A1

公开(公告)日：2025-01-30

申请号：US18916887

申请日：2024-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghoon Park ,  Hyungjin Bae ,  Seungho Shin ,  Youngsun Oh ,  Moosup Lim

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first surface and a second surface facing the first surface, a first photodiode located in a first region of the substrate and generating photocharges from light incident on the first region, a second photodiode located in a second region of the substrate and generating photocharges from light incident on the second region, and an isolation structure defining the first region in which the first photodiode is located and the second region in which the second photodiode is located, and extending between the first photodiode and the second photodiode. An area of the second region is smaller than an area of the first region, a first end of the isolation structure is coplanar with the second surface, and the isolation structure extends in a vertical direction from the second surface of the substrate toward the first surface of the substrate.

公开(公告)号：US20220328557A1

公开(公告)日：2022-10-13

申请号：US17533468

申请日：2021-11-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghoon Park ,  Hyungjin Bae ,  Seungho Shin ,  Youngsun Oh ,  Moosup Lim

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first surface and a second surface facing the first surface, a first photodiode located in a first region of the substrate and generating photocharges from light incident on the first region, a second photodiode located in a second region of the substrate and generating photocharges from light incident on the second region, and an isolation structure defining the first region in which the first photodiode is located and the second region in which the second photodiode is located, and extending between the first photodiode and the second photodiode. An area of the second region is smaller than an area of the first region, a first end of the isolation structure is coplanar with the second surface, and the isolation structure extends in a vertical direction from the second surface of the substrate toward the first surface of the substrate.