公开(公告)号：US11848338B2

公开(公告)日：2023-12-19

申请号：US17313601

申请日：2021-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunji Park ,  Hyungjin Bae ,  Moosup Lim ,  Seungho Shin ,  Kangsun Lee

IPC: H01L27/146 ,  H04N23/73 ,  H04N23/741 ,  H04N23/745

CPC classification number: H01L27/14605 ,  H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H04N23/73 ,  H04N23/741 ,  H04N23/745

Abstract: An image sensor includes a plurality of first photodiodes included in a first area of a unit pixel, and configured to generate electric charges, a second photodiode included in a second area of the unit pixel, and configured to generate electric charges, a first microlens disposed above the first area, a second microlens disposed above the second area, a first floating diffusion region included in the first area, a second floating diffusion region included in the second area, a plurality of first transfer transistors configured to provide the electric charges generated by the plurality of first photodiodes to the first floating diffusion region, and a second transfer transistor configured to provide the electric charges generated by the second photodiode to the second floating diffusion region. A sum of light-receiving areas of the plurality of first photodiodes is greater than a light-receiving area of the second photodiode.

公开(公告)号：US20220123033A1

公开(公告)日：2022-04-21

申请号：US17313601

申请日：2021-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunji Park ,  Hyungjin Bae ,  Moosup Lim ,  Seungho Shin ,  Kangsun Lee

IPC: H01L27/146 ,  H04N5/235

Abstract: An image sensor includes a plurality of first photodiodes included in a first area of a unit pixel, and configured to generate electric charges, a second photodiode included in a second area of the unit pixel, and configured to generate electric charges, a first microlens disposed above the first area, a second microlens disposed above the second area, a first floating diffusion region included in the first area, a second floating diffusion region included in the second area, a plurality of first transfer transistors configured to provide the electric charges generated by the plurality of first photodiodes to the first floating diffusion region, and a second transfer transistor configured to provide the electric charges generated by the second photodiode to the second floating diffusion region. A sum of light-receiving areas of the plurality of first photodiodes is greater than a light-receiving area of the second photodiode.