SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM

    公开(公告)号:US20250087585A1

    公开(公告)日:2025-03-13

    申请号:US18731176

    申请日:2024-05-31

    Abstract: A semiconductor device includes a first word line having a first electrode portion and a first extension portion extending from the first electrode portion, a second word line having a second electrode portion disposed at a higher level than the first electrode portion and a second extension portion extending from the second electrode portion, a first vertical memory structure penetrating through the first and second electrode portions in a vertical direction, and a first interconnection structure electrically connected to the first extension portion. The first extension portion includes a first lower portion extending from the first electrode portion and a first plug portion extending upwardly from at least one side of the first lower portion and connected to the first interconnection structure. At least a portion of the first lower portion has a thickness greater than a thickness of the first electrode portion.

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