公开(公告)号：US10319805B2

公开(公告)日：2019-06-11

申请号：US15626271

申请日：2017-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Ho Yoon ,  Won Chul Lee ,  Sung Yeon Kim ,  Jae Hong Park ,  Chan Hoon Park ,  Yong Moon Jang ,  Je Woo Han

IPC: H01L21/28 ,  H01L21/283 ,  H01L21/311 ,  H01L49/02 ,  H01L21/033 ,  H01L21/3205 ,  H01L21/8242 ,  H01L21/306

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

公开(公告)号：US10607855B2

公开(公告)日：2020-03-31

申请号：US15862541

申请日：2018-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Ho Yoon ,  Jae Hong Park ,  Da Il Eom ,  Sung Yeon Kim ,  Jin Young Park ,  Yong Moon Jang

IPC: H01L21/3213 ,  H01L21/308 ,  H01L21/311 ,  H01L27/108 ,  G03F1/00 ,  H01L21/304 ,  H01L49/02 ,  H01L21/033

Abstract: A method for fabricating a semiconductor device includes forming an insulating layer on a substrate; forming a first mask pattern including silicon on the insulating layer and forming a second mask pattern including an oxide on the first mask pattern; forming a coating layer that includes carbon and which covers an upper surface of the insulating layer, a sidewall of the first mask pattern, and the second mask pattern; removing a portion of the coating layer and the second mask pattern; forming a metal layer on an upper surface of the first mask pattern and on a sidewall of the coating layer; exposing the upper surface of the insulating layer by removing the coating layer; and etching the insulating layer by using the first mask pattern and the metal layer as a mask.

公开(公告)号：US10720491B2

公开(公告)日：2020-07-21

申请号：US16419153

申请日：2019-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Ho Yoon ,  Won Chul Lee ,  Sung Yeon Kim ,  Jae Hong Park ,  Chan Hoon Park ,  Yong Moon Jang ,  Je Woo Han

IPC: H01L21/28 ,  H01L21/283 ,  H01L21/311 ,  H01L49/02 ,  H01L21/033 ,  H01L21/3205 ,  H01L21/8242 ,  H01L21/306

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

公开(公告)号：US20190027376A1

公开(公告)日：2019-01-24

申请号：US15862541

申请日：2018-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUN HO YOON ,  Jae Hong Park ,  DA IL EOM ,  Sung Yeon Kim ,  Jin Young Park ,  Yong Moon Jang

IPC: H01L21/3213 ,  H01L27/108 ,  H01L21/311 ,  G03F1/00 ,  H01L21/308 ,  H01L21/304

Abstract: A method for fabricating a semiconductor device includes forming an insulating layer on a substrate; forming a first mask pattern including silicon on the insulating layer and forming a second mask pattern including an oxide on the first mask pattern; forming a coating layer that includes carbon and which covers an upper surface of the insulating layer, a sidewall of the first mask pattern, and the second mask pattern; removing a portion of the coating layer and the second mask pattern; forming a metal layer on an upper surface of the first mask pattern and on a sidewall of the coating layer; exposing the upper surface of the insulating layer by removing the coating layer; and etching the insulating layer by using the first mask pattern and the metal layer as a mask.