公开(公告)号：US20190027376A1

公开(公告)日：2019-01-24

申请号：US15862541

申请日：2018-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUN HO YOON ,  Jae Hong Park ,  DA IL EOM ,  Sung Yeon Kim ,  Jin Young Park ,  Yong Moon Jang

IPC: H01L21/3213 ,  H01L27/108 ,  H01L21/311 ,  G03F1/00 ,  H01L21/308 ,  H01L21/304

Abstract: A method for fabricating a semiconductor device includes forming an insulating layer on a substrate; forming a first mask pattern including silicon on the insulating layer and forming a second mask pattern including an oxide on the first mask pattern; forming a coating layer that includes carbon and which covers an upper surface of the insulating layer, a sidewall of the first mask pattern, and the second mask pattern; removing a portion of the coating layer and the second mask pattern; forming a metal layer on an upper surface of the first mask pattern and on a sidewall of the coating layer; exposing the upper surface of the insulating layer by removing the coating layer; and etching the insulating layer by using the first mask pattern and the metal layer as a mask.