公开(公告)号：US20200251658A1

公开(公告)日：2020-08-06

申请号：US16589330

申请日：2019-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DA IL EOM ,  KEEWON KIM ,  BYEONGTAEK BAE ,  MINKYUNG LEE

IPC: H01L51/00 ,  H01L27/30 ,  H01L51/42

Abstract: A method of measuring an image sensor is disclosed. The method includes connecting a measurement unit to an image sensor, producing an electric current, which sequentially flows through a second connection line, second lower electrodes, an upper electrode, first lower electrodes, and a first connection line of the image sensor, using the measurement unit, and measuring an alignment state of the lower electrodes, the photoelectric conversion layer, and the upper electrode.

公开(公告)号：US20190027376A1

公开(公告)日：2019-01-24

申请号：US15862541

申请日：2018-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUN HO YOON ,  Jae Hong Park ,  DA IL EOM ,  Sung Yeon Kim ,  Jin Young Park ,  Yong Moon Jang

IPC: H01L21/3213 ,  H01L27/108 ,  H01L21/311 ,  G03F1/00 ,  H01L21/308 ,  H01L21/304

Abstract: A method for fabricating a semiconductor device includes forming an insulating layer on a substrate; forming a first mask pattern including silicon on the insulating layer and forming a second mask pattern including an oxide on the first mask pattern; forming a coating layer that includes carbon and which covers an upper surface of the insulating layer, a sidewall of the first mask pattern, and the second mask pattern; removing a portion of the coating layer and the second mask pattern; forming a metal layer on an upper surface of the first mask pattern and on a sidewall of the coating layer; exposing the upper surface of the insulating layer by removing the coating layer; and etching the insulating layer by using the first mask pattern and the metal layer as a mask.