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公开(公告)号:US10453796B2
公开(公告)日:2019-10-22
申请号:US15706655
申请日:2017-09-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jungwoo Song , Ye-Ro Lee , Kwangtae Hwang , Kwangmin Kim , Yong Kwan Kim , Jiyoung Kim
IPC: H01L27/108 , H01L21/768 , H01L23/532 , H01L27/02 , H01L23/522
Abstract: A semiconductor device including a substrate includes an active region. A bit line structure extends across the active region. A landing pad is disposed on an end portion of the active region. A first spacer is disposed between the bit line structure and the landing pad. A second spacer is disposed between the first spacer and the landing pad. An air spacer is disposed between the first spacer and the second spacer. A capping pattern is disposed between a sidewall of the landing pad and a sidewall of the bit line structure. The capping pattern defines a top surface of the air spacer and comprises a metallic material.
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公开(公告)号:US11837545B2
公开(公告)日:2023-12-05
申请号:US17399043
申请日:2021-08-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jungwoo Song , Ye-Ro Lee , Kwangtae Hwang , Kwangmin Kim , Yong Kwan Kim , Jiyoung Kim
IPC: H10B12/00 , H01L23/532 , H01L27/02 , H01L21/768 , H01L23/522
CPC classification number: H01L23/5329 , H01L21/768 , H01L27/0207 , H10B12/033 , H10B12/053 , H10B12/315 , H10B12/34 , H10B12/482 , H10B12/485 , H01L21/7682 , H01L21/76897 , H01L23/5222
Abstract: A semiconductor device including a substrate includes an active region. A bit line structure extends across the active region. A landing pad is disposed on an end portion of the active region. A first spacer is disposed between the bit line structure and the landing pad. A second spacer is disposed between the first spacer and the landing pad. An air spacer is disposed between the first spacer and the second spacer. A capping pattern is disposed between a sidewall of the landing pad and a sidewall of the bit line structure. The capping pattern defines a top surface of the air spacer and comprises a metallic material.
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