公开(公告)号：US20230163213A1

公开(公告)日：2023-05-25

申请号：US17843970

申请日：2022-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANGGIL LEE ,  SEOKHOON KIM ,  SUNGMIN KIM ,  JUNGTAEK KIM ,  PANKWI PARK ,  DONGSUK SHIN ,  NAMKYU CHO ,  RYONG HA ,  YANG XU

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/49 ,  H01L29/417 ,  H01L21/02

CPC classification number: H01L29/785 ,  H01L29/7848 ,  H01L29/42312 ,  H01L29/49 ,  H01L29/41791 ,  H01L21/02233 ,  H01L21/02532

Abstract: Disclosed is a semiconductor device comprising a substrate including first and second PMOSFET regions, first and second active patterns on the first and second PMOSFET regions, first and second channel patterns on the first and second active patterns and each including semiconductor patterns, and first and second source/drain patterns connected to the first and second channel patterns. The first active pattern includes a first lower semiconductor layer, a first middle semiconductor layer, and a first upper semiconductor layer. Each of the first and second lower semiconductor layers includes silicon. The first middle semiconductor layer includes silicon-germanium. The first middle semiconductor layer has a width that decreases in a downward direction to a maximum value and then increases in the downward direction.

公开(公告)号：US20250169133A1

公开(公告)日：2025-05-22

申请号：US18635282

申请日：2024-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： GYEOM KIM ,  YOON TAE NAM ,  SANG MOON LEE ,  KYUNG BIN CHUN ,  RYONG HA ,  YANG XU

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device is provided. The semiconductor device comprises an active pattern extending in a first direction, a plurality of gate structures on the active pattern and spaced apart in the first direction and a source/drain pattern between adjacent ones of the gate structures, wherein the source/drain pattern includes a semiconductor liner film in contact with the active pattern, a lower semiconductor filling film on the semiconductor liner film, an upper semiconductor filling film on the lower semiconductor filling film, and a semiconductor buffer film between the lower semiconductor filling film and the upper semiconductor filling film, each of the semiconductor liner film, the lower semiconductor filling film, the upper semiconductor filling film, and the semiconductor buffer film includes silicon-germanium, a germanium fraction of the semiconductor buffer film is smaller than a germanium fraction of the upper semiconductor filling film and a germanium fraction of the lower semiconductor filling film.