公开(公告)号：US20140097448A1

公开(公告)日：2014-04-10

申请号：US13868490

申请日：2013-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woong-je SUNG ,  Chang-yong UM ,  Jai-kwang SHIN

IPC: H01L27/088 ,  H01L21/8232 ,  H01L21/82

CPC classification number: H01L27/088 ,  H01L21/0455 ,  H01L21/0475 ,  H01L21/049 ,  H01L21/8213 ,  H01L21/8232 ,  H01L29/7827

Abstract: A semiconductor device includes a drift layer including a trench formed on a semiconductor substrate. A well in the drift layer overlaps an edge of the trench, and at least one gate electrode is formed at this overlapping edge region. The drift layer and semiconductor may be doped with a first type of impurity and the well may be doped with a second type of impurity. Through this arrangement, an improved distribution of carriers may be formed in the drift layer.

Abstract translation: 半导体器件包括漂移层，其包括在半导体衬底上形成的沟槽。 漂移层中的阱与沟槽的边缘重叠，并且在该重叠边缘区域形成至少一个栅电极。 漂移层和半导体可以掺杂第一类型的杂质，并且阱可以掺杂第二类型的杂质。 通过这种布置，可以在漂移层中形成改进的载流子分布。

公开(公告)号：US20140091366A1

公开(公告)日：2014-04-03

申请号：US13922395

申请日：2013-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-chul JEON ,  Woong-je SUNG ,  Jai-kwang SHIN ,  Jae-joon OH

IPC: H01L27/088 ,  H01L29/66

CPC classification number: H01L27/0883 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0694 ,  H01L27/085 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

Abstract: Example embodiments relate to semiconductor devices and/or methods of manufacturing the same. According to example embodiments, a semiconductor device may include a first heterojunction field effect transistor (HFET) on a first surface of a substrate, and a second HFET. A second surface of the substrate may be on the second HFET. The second HFET may have different properties (characteristics) than the first HFET. One of the first and second HFETs may be of an n type, while the other thereof may be of a p type. The first and second HFETs may be high-electron-mobility transistors (HEMTs). One of the first and second HFETs may have normally-on properties, while the other thereof may have normally-off properties.

Abstract translation: 示例性实施例涉及半导体器件和/或其制造方法。 根据示例实施例，半导体器件可以包括在衬底的第一表面上的第一异质结场效应晶体管（HFET）和第二HFET。 衬底的第二表面可以在第二HFET上。 第二HFET可以具有与第一HFET不同的特性（特性）。 第一和第二HFET中的一个可以是n型，而另一个可以是p型。 第一和第二HFET可以是高电子迁移率晶体管（HEMT）。 第一和第二HFET中的一个可以具有通常的属性，而另一个可以具有正常的属性。