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    MEMORY DEVICE AND MEMORY SYSTEM
    5.
    发明申请
    MEMORY DEVICE AND MEMORY SYSTEM 有权

    公开(公告)号：US20230042955A1

    公开(公告)日：2023-02-09

    申请号：US17689064

    申请日：2022-03-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jung Min YOU ,  Ho-Youn KIM ,  Won-Hyung SONG ,  Hi Jung KIM

    IPC: G11C11/406 ,  G11C11/408

    Abstract: A memory device includes memory cells connected to a first word-line, wherein the memory cells include a data region in which data is stored and a counting value backup region in which the number of times the first word-line is activated is backed up, a counting table for storing a first row address corresponding to the first word-line and a first counting value as a counting result of the number of times the first word-line is activated, and a comparator configured to compare the first counting value with a first backed-up counting value stored in the counting value backup region; and when the first counting value is greater than the first backed-up counting value, back up the first counting value in the counting value backup region, or when the first backed-up counting value is greater than the first counting value, overwrite the first backed-up counting value into the counting table.

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