公开(公告)号：US10049882B1

公开(公告)日：2018-08-14

申请号：US15414913

申请日：2017-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Woong Chung ,  Sun hye Hwang ,  Youn Joung Cho ,  Jung Sik Choi ,  Xiaobing Zhou ,  Brian David Rekken ,  Byung Keun Hwang ,  Michael David Telgenhoff

IPC: H01L21/28 ,  H01L21/02

Abstract: A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.

公开(公告)号：US09812329B2

公开(公告)日：2017-11-07

申请号：US15291268

申请日：2016-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won Woong Chung ,  Youn Joung Cho ,  Jung Sik Choi

IPC: H01L21/285 ,  H01L21/786 ,  H01L21/8238 ,  H01L21/768

CPC classification number: H01L21/28518 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76895 ,  H01L21/823814 ,  H01L21/823871 ,  H01L21/823878 ,  H01L23/485 ,  H01L29/66515 ,  H01L29/66545 ,  H01L29/78

Abstract: There is provides a method of fabricating a semiconductor device to decrease contact resistance of source/drain regions and gate electrodes and thereby improve operation performance. The method includes providing an exposed silicon region, forming a rare earth metal silicide film on the exposed silicon region, the rare earth metal silicide film contacting the silicon region, and forming a contact on the rare earth metal silicide film, the contact being electrically connected to the exposed silicon region, wherein the rare earth metal silicide film is formed by simultaneously supplying a rare earth metal and silicon to the exposed silicon region using physical vapor deposition.