公开(公告)号：US10049882B1

公开(公告)日：2018-08-14

申请号：US15414913

申请日：2017-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Woong Chung ,  Sun hye Hwang ,  Youn Joung Cho ,  Jung Sik Choi ,  Xiaobing Zhou ,  Brian David Rekken ,  Byung Keun Hwang ,  Michael David Telgenhoff

IPC: H01L21/28 ,  H01L21/02

Abstract: A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.