公开(公告)号：US20150303060A1

公开(公告)日：2015-10-22

申请号：US14602671

申请日：2015-01-22

Applicant: Samsung Electronics Co., Ltd. ,  Dow Corning Corporation

Inventor： JunHyun Cho ,  Michael David Telgenhoff ,  Xiaobing Zhou ,  Kyunghye Jung ,  Younjoung Cho

IPC: H01L21/02 ,  H01L27/115

CPC classification number: H01L27/10855 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28562 ,  H01L21/32055 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/108 ,  H01L27/10814 ,  H01L27/11556

Abstract: The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.

Abstract translation: 本发明构思提供了硅前体，使用其形成层的方法，以及制造使用其的半导体器件的方法。 硅前体包括包含两个或多个硅原子的硅烷基团。 硅前体在制造半导体器件时主要使用的层（例如，硅层，氧化物层和氮化物层）的表面上具有高且均匀的吸附性能。

公开(公告)号：US09899392B2

公开(公告)日：2018-02-20

申请号：US15223685

申请日：2016-07-29

Applicant: Samsung Electronics Co., Ltd. ,  Dow Corning Corporation

Inventor： JunHyun Cho ,  Michael David Telgenhoff ,  Xiaobing Zhou ,  Kyunghye Jung ,  Younjoung Cho

IPC: H01L21/20 ,  H01L27/108 ,  H01L21/02 ,  H01L27/11556

CPC classification number: H01L27/10855 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28562 ,  H01L21/32055 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/108 ,  H01L27/10814 ,  H01L27/11556

Abstract: The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.

公开(公告)号：US10049882B1

公开(公告)日：2018-08-14

申请号：US15414913

申请日：2017-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Woong Chung ,  Sun hye Hwang ,  Youn Joung Cho ,  Jung Sik Choi ,  Xiaobing Zhou ,  Brian David Rekken ,  Byung Keun Hwang ,  Michael David Telgenhoff

IPC: H01L21/28 ,  H01L21/02

Abstract: A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.

公开(公告)号：US20160336328A1

公开(公告)日：2016-11-17

申请号：US15223685

申请日：2016-07-29

Applicant: Samsung Electronics Co., Ltd. ,  Dow Corning Corporation

Inventor： JunHyun Cho ,  Michael David Telgenhoff ,  Xiaobing Zhou ,  Kyunghye Jung ,  Younjoung Cho

IPC: H01L27/108

CPC classification number: H01L27/10855 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28562 ,  H01L21/32055 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/108 ,  H01L27/10814 ,  H01L27/11556

Abstract: The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.