公开(公告)号：US09142558B2

公开(公告)日：2015-09-22

申请号：US14066000

申请日：2013-10-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Jeong Yang ,  Soon-Wook Jung ,  Bong-Jin Kuh ,  Wan-Don Kim ,  Byung-Hong Chung ,  Yong-Suk Tak

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L28/60 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/91

Abstract: A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %.

Abstract translation: 半导体器件包括多个下电极，其垂直长度大于衬底上的水平宽度，设置在下电极之间的支撑体，设置在下电极上的上电极，以及设置在下电极和下电极之间的电容器电介质层 上电极。 支撑体包括第一元件，第二元件和氧，第二元件的氧化物具有比第一元件的氧化物更高的带隙能量，并且支撑件中的第二元件的含量为约10原子％ 至90原子％。

公开(公告)号：US10566433B2

公开(公告)日：2020-02-18

申请号：US16030291

申请日：2018-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Hyuk Yim ,  Wan-Don Kim ,  Jong-Han Lee ,  Hyung-Suk Jung ,  Sang-Jin Hyun

IPC: H01L29/423 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/8238 ,  H01L29/66 ,  H01L27/092

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first transistor formed in the first region and formed by a first gate line including a first lower metal-containing layer and a first upper metal-containing layer, and a second transistor formed in the second region and formed by a second gate line having an equal width to that of the first gate line and including a second lower metal-containing layer and a second upper metal-containing layer on the second upper metal-containing layer, wherein each of an uppermost end of the first upper metal-containing layer and an uppermost end of the second lower metal-containing layer has a higher level than an uppermost end of the first lower metal-containing layer.

公开(公告)号：US20180019314A1

公开(公告)日：2018-01-18

申请号：US15717324

申请日：2017-09-27

Applicant: Samsung Electronics Co ., Ltd .

Inventor： Wan-Don Kim ,  Oh-Seong KWON ,  Hoon-Joo NA ,  Hyeok-Jun SON ,  Jae-Yeol SONG ,  Sung-Kee HAN ,  Sang-Jin HYUN

IPC: H01L29/49 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/423

CPC classification number: H01L29/4966 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823462 ,  H01L27/0886 ,  H01L29/42364 ,  H01L29/4238

Abstract: A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first conductivity type on the first dielectric film, a second transistor comprising a second dielectric film on the substrate and a second work function metal film of the first conductivity type on the second dielectric film, and a third transistor comprising a third dielectric film on the substrate and a third work function metal film of the first conductivity type on the third dielectric film. The first dielectric film comprises a work function tuning material and the second dielectric film does not comprise the work function tuning material. The first work function metal film has different thickness than the third work function metal film. Related methods are also described.

公开(公告)号：US09553141B2

公开(公告)日：2017-01-24

申请号：US14858069

申请日：2015-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Jeong Yang ,  Soon-Wook Jung ,  Bong-Jin Kuh ,  Wan-Don Kim ,  Byung-Hong Chung ,  Yong-Suk Tak

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/60 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/91

Abstract: A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %.

Abstract translation: 半导体器件包括多个下电极，其垂直长度大于衬底上的水平宽度，设置在下电极之间的支撑体，设置在下电极上的上电极，以及设置在下电极和下电极之间的电容器电介质层 上电极。 支撑体包括第一元件，第二元件和氧，第二元件的氧化物具有比第一元件的氧化物更高的带隙能量，并且支撑件中的第二元件的含量为约10原子％ 至90原子％。

公开(公告)号：US10312340B2

公开(公告)日：2019-06-04

申请号：US15717324

申请日：2017-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wan-Don Kim ,  Oh-Seong Kwon ,  Hoon-Joo Na ,  Hyeok-Jun Son ,  Jae-Yeol Song ,  Sung-Kee Han ,  Sang-Jin Hyun

IPC: H01L29/49 ,  H01L27/088 ,  H01L29/423 ,  H01L21/8234

Abstract: A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first conductivity type on the first dielectric film, a second transistor comprising a second dielectric film on the substrate and a second work function metal film of the first conductivity type on the second dielectric film, and a third transistor comprising a third dielectric film on the substrate and a third work function metal film of the first conductivity type on the third dielectric film. The first dielectric film comprises a work function tuning material and the second dielectric film does not comprise the work function tuning material. The first work function metal film has different thickness than the third work function metal film. Related methods are also described.