公开(公告)号：US09142558B2

公开(公告)日：2015-09-22

申请号：US14066000

申请日：2013-10-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Jeong Yang ,  Soon-Wook Jung ,  Bong-Jin Kuh ,  Wan-Don Kim ,  Byung-Hong Chung ,  Yong-Suk Tak

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L28/60 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/91

Abstract: A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %.

Abstract translation: 半导体器件包括多个下电极，其垂直长度大于衬底上的水平宽度，设置在下电极之间的支撑体，设置在下电极上的上电极，以及设置在下电极和下电极之间的电容器电介质层 上电极。 支撑体包括第一元件，第二元件和氧，第二元件的氧化物具有比第一元件的氧化物更高的带隙能量，并且支撑件中的第二元件的含量为约10原子％ 至90原子％。

公开(公告)号：US09553141B2

公开(公告)日：2017-01-24

申请号：US14858069

申请日：2015-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Jeong Yang ,  Soon-Wook Jung ,  Bong-Jin Kuh ,  Wan-Don Kim ,  Byung-Hong Chung ,  Yong-Suk Tak

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/60 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/91

Abstract: A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %.

Abstract translation: 半导体器件包括多个下电极，其垂直长度大于衬底上的水平宽度，设置在下电极之间的支撑体，设置在下电极上的上电极，以及设置在下电极和下电极之间的电容器电介质层 上电极。 支撑体包括第一元件，第二元件和氧，第二元件的氧化物具有比第一元件的氧化物更高的带隙能量，并且支撑件中的第二元件的含量为约10原子％ 至90原子％。