公开(公告)号：US09059090B2

公开(公告)日：2015-06-16

申请号：US14257466

申请日：2014-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Youn Kim ,  Hyun-Min Choi ,  Sung-Kee Han ,  Je-Don Kim

IPC: H01L21/28 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L21/28008 ,  H01L21/28518 ,  H01L21/823462 ,  H01L29/66545

Abstract: A method of fabricating a semiconductor device includes forming a first gate pattern and a dummy gate pattern on a first active area and a second active area of a substrate, respectively, the first gate pattern including a first gate insulating layer and a silicon gate electrode, removing the dummy gate pattern to expose a surface of the substrate in the second active area, forming a second gate pattern including a second gate insulating layer and a metal gate electrode on the exposed surface of the substrate, the first gate insulating layer having a thickness larger than a thickness of the second gate insulating layer, and forming a gate silicide on the silicon gate electrode after forming the second gate pattern.

Abstract translation: 一种制造半导体器件的方法包括分别在衬底的第一有源区和第二有源区上形成第一栅极图案和伪栅极图案，所述第一栅极图案包括第一栅极绝缘层和硅栅电极， 去除伪栅极图案以在第二有源区域中露出衬底的表面，在衬底的暴露表面上形成包括第二栅极绝缘层和金属栅电极的第二栅极图案，第一栅极绝缘层具有厚度 大于第二栅极绝缘层的厚度，以及在形成第二栅极图案之后在硅栅电极上形成栅极硅化物。

公开(公告)号：US10312340B2

公开(公告)日：2019-06-04

申请号：US15717324

申请日：2017-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wan-Don Kim ,  Oh-Seong Kwon ,  Hoon-Joo Na ,  Hyeok-Jun Son ,  Jae-Yeol Song ,  Sung-Kee Han ,  Sang-Jin Hyun

IPC: H01L29/49 ,  H01L27/088 ,  H01L29/423 ,  H01L21/8234

Abstract: A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first conductivity type on the first dielectric film, a second transistor comprising a second dielectric film on the substrate and a second work function metal film of the first conductivity type on the second dielectric film, and a third transistor comprising a third dielectric film on the substrate and a third work function metal film of the first conductivity type on the third dielectric film. The first dielectric film comprises a work function tuning material and the second dielectric film does not comprise the work function tuning material. The first work function metal film has different thickness than the third work function metal film. Related methods are also described.