公开(公告)号：US20190157410A1

公开(公告)日：2019-05-23

申请号：US16030291

申请日：2018-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Hyuk Yim ,  Wan-Don KIM ,  Jong-Han LEE ,  Hyung-Suk JUNG ,  Sang-Jin HYUN

IPC: H01L29/423 ,  H01L27/088 ,  H01L21/8234

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first transistor formed in the first region and formed by a first gate line including a first lower metal-containing layer and a first upper metal-containing layer, and a second transistor formed in the second region and formed by a second gate line having an equal width to that of the first gate line and including a second lower metal-containing layer and a second upper metal-containing layer on the second upper metal-containing layer, wherein each of an uppermost end of the first upper metal-containing layer and an uppermost end of the second lower metal-containing layer has a higher level than an uppermost end of the first lower metal-containing layer.

公开(公告)号：US10566433B2

公开(公告)日：2020-02-18

申请号：US16030291

申请日：2018-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Hyuk Yim ,  Wan-Don Kim ,  Jong-Han Lee ,  Hyung-Suk Jung ,  Sang-Jin Hyun

IPC: H01L29/423 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/8238 ,  H01L29/66 ,  H01L27/092

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first transistor formed in the first region and formed by a first gate line including a first lower metal-containing layer and a first upper metal-containing layer, and a second transistor formed in the second region and formed by a second gate line having an equal width to that of the first gate line and including a second lower metal-containing layer and a second upper metal-containing layer on the second upper metal-containing layer, wherein each of an uppermost end of the first upper metal-containing layer and an uppermost end of the second lower metal-containing layer has a higher level than an uppermost end of the first lower metal-containing layer.