公开(公告)号：US20230268366A1

公开(公告)日：2023-08-24

申请号：US18097749

申请日：2023-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungki BAEK ,  KYUNGHO LEE ,  TAESUB JUNG ,  SEUNGKI JUNG ,  JUNGHYUNG PYO

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14636

Abstract: An image sensor includes a substrate including a pixel region, the substrate extending in a first direction and a second direction intersecting the first direction, first and second photoelectric conversion regions disposed in the pixel region and adjacent to each other in a first direction, a deep device isolation pattern penetrating the substrate in a third direction perpendicular to the first and second directions, and surrounding the pixel region, the deep device isolation pattern comprising first extensions extending in the second direction between the first and second photoelectric conversion regions, the first extensions spaced apart from each other in the second direction, a plurality of first transfer gate electrodes vertically overlapping with the first photoelectric conversion region, and a plurality of second transfer gate electrodes vertically overlapping with the second photoelectric conversion region. The first photoelectric conversion region extends in the second direction under the plurality of first transfer gate electrodes.

公开(公告)号：US20200176499A1

公开(公告)日：2020-06-04

申请号：US16784308

申请日：2020-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： JONGHOON PARK ,  BUMSUK KIM ,  JUNG-SAENG KIM ,  MIN JANG ,  TAESUB JUNG ,  HYUKJIN JUNG ,  DONGMIN KEUM ,  CHANGROK MOON

IPC: H01L27/146 ,  H01L27/32 ,  G06K9/00 ,  G06F21/32

Abstract: Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.

公开(公告)号：US20240421171A1

公开(公告)日：2024-12-19

申请号：US18818755

申请日：2024-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： TAESUB JUNG ,  KYUNGHO LEE ,  MASATO FUJITA ,  DOOSIK SEOL ,  KYUNGDUCK LEE

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor is provided. The image sensor includes a first pixel region and a second pixel region located within a semiconductor substrate, a first isolation layer surrounding the first pixel region and the second pixel region, a second isolation layer located between the first pixel region and the second pixel region, and a microlens arranged on the first pixel region and the second pixel region. Each of the first pixel region and the second pixel region include a photoelectric conversion device. The second isolation layer includes at least one first open region that exposes a portion of an area located between the first pixel region and the second pixel region.

公开(公告)号：US20200279881A1

公开(公告)日：2020-09-03

申请号：US16592840

申请日：2019-10-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUNGGU JIN ,  YOUNGCHAN KIM ,  YONGHUN KWON ,  MOOSUP LIM ,  TAESUB JUNG

IPC: H01L27/146 ,  H04N5/378

Abstract: An image sensor includes a polarizer array and a depth pixel array. The polarizer array may include first to fourth unit pixels, which are arranged in a first direction and a second direction crossing each other, and may include polarization gratings respectively provided in the first to fourth unit pixels. The polarization gratings of the first to fourth unit pixels may have polarization directions different from each other. The depth pixel array may include depth pixels corresponding to the first to fourth unit pixels, respectively. Each of the depth pixels may include a photoelectric conversion device and first and second readout circuits, which are connected in common to the photoelectric conversion device.

公开(公告)号：US20200227459A1

公开(公告)日：2020-07-16

申请号：US16831928

申请日：2020-03-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： JONGHOON PARK ,  BUMSUK KIM ,  JUNG-SAENG KIM ,  MIN JANG ,  TAESUB JUNG ,  HYUKJIN JUNG ,  DONGMIN KEUM ,  CHANGROK MOON

IPC: H01L27/146 ,  G06K9/00 ,  H01L27/32 ,  G06F21/32

Abstract: Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.

公开(公告)号：US20220359585A1

公开(公告)日：2022-11-10

申请号：US17675145

申请日：2022-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MASATO FUJITA ,  KYUNGHO LEE ,  DOOSIK SEOL ,  TAESUB JUNG

IPC: H01L27/146

Abstract: Provided is an image sensor including a semiconductor substrate having first and second surfaces disposed opposite to the first surface, a pixel separation structure disposed in the semiconductor substrate and defining and surrounding a pixel region, first and second photoelectric conversion regions disposed in the semiconductor substrate on the pixel region, a first transfer gate electrode disposed on the first surface of the semiconductor substrate and between the first photoelectric conversion region and a first floating diffusion region, a second transfer gate electrode disposed on the first surface of the semiconductor substrate and between the second photoelectric conversion region and a second floating diffusion region, a pixel gate electrode disposed on the first surface of the semiconductor substrate and overlapping one of the first and second photoelectric conversion regions, and impurity regions disposed on opposite sides of the pixel gate electrode.

公开(公告)号：US20220337771A1

公开(公告)日：2022-10-20

申请号：US17565591

申请日：2021-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNG BIN YUN ,  KYUNGHO LEE ,  EUN SUB SHIM ,  TAESUB JUNG

IPC: H04N5/369 ,  H04N5/3745

Abstract: A camera module includes pixels each including first to fourth sub-pixels, a row driver connected to the pixels through row lines, an analog-to-digital conversion circuit connected to the pixels through column lines and converting signals of the column lines into digital values, and a logic circuit. Each of the first to fourth sub-pixels includes a first region and a second region. Each of the first and second regions includes a photo detector. In response to the row driver activating signals of half or less of the photo detectors included in one pixel among the pixels, the analog-to-digital conversion circuit generates a first signal. The logic circuit generates an auto focus signal based on the first signal.

公开(公告)号：US20220329747A1

公开(公告)日：2022-10-13

申请号：US17714687

申请日：2022-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEONGJIN CHO ,  YOUJIN JEONG ,  TAESUB JUNG

IPC: H04N5/3745 ,  H04N9/04 ,  G02B3/00 ,  G02B5/20 ,  H01L27/146

Abstract: An image sensor includes; a pixel array including pixels arranged in a first direction and a second direction, wherein the pixels includes a first normal pixel and a first auto focus (AF) pixel adjacent in the first direction, and a second AF pixel and a second normal pixel adjacent in the first direction. Each of the first AF pixel and the second AF pixel includes at least two photodiodes, each of the first normal pixel and the second normal pixel has a quadrangular shape, a first length of the first AF pixel in the first direction is greater than a first length of the first normal pixel in the first direction, and a first length of the second AF pixel in the first direction is greater than a first length of the second normal pixel in the first direction.

公开(公告)号：US20220173139A1

公开(公告)日：2022-06-02

申请号：US17443791

申请日：2021-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYUNGDUCK LEE ,  SEUNGKI BAEK ,  KYUNGHO LEE ,  HYUNCHEOL KIM ,  DOOSIK SEOL ,  TAESUB JUNG ,  MASATO FUJITA

IPC: H01L27/146

Abstract: An image sensor includes: (1) a substrate having first and second surfaces opposing each other in a first direction and a plurality of unit pixels, (2) first and second photodiodes disposed in the substrate in each of the plurality of unit pixels and isolated from each other in a second direction perpendicular to the first direction, (3) a first device isolation film disposed between the plurality of unit pixels, and (4) a pixel internal isolation film disposed in at least one of the plurality of unit pixels. A second device isolation film overlaps at least one of the first and second photodiodes in the first direction. A pair of third device isolation films: (a) extend from the first device isolation film into the unit pixel in a third direction perpendicular to the first direction and the second direction and (b) oppose each other.