公开(公告)号：US20210202264A1

公开(公告)日：2021-07-01

申请号：US17008736

申请日：2020-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUNGCHAN KIM ,  YOUNGTAK KIM ,  JUNGAH KIM ,  HOON HAN ,  GEUNJOO BAEK ,  CHISUNG IHN ,  SANGMOON YUN

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/306

Abstract: Etchant compositions described herein include etchant compositions for etching a silicon film and may include nitric acid, fluoric acid, phosphoric acid, acetic acid, a nitrogen compound, and water. The nitrogen compound may include fluorine (F), phosphorus (P), and/or carbon (C). Also described are methods of manufacturing an integrated circuit (IC) device. The methods may include providing a structure in which a silicon film doped at a first dopant concentration and an epitaxial film doped at a second dopant concentration are stacked. The second dopant concentration may be different from the first dopant concentration. The silicon film may be selectively etched from the structure by using an etchant composition.

公开(公告)号：US20230307482A1

公开(公告)日：2023-09-28

申请号：US18094473

申请日：2023-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGGU JIN ,  SEUNGHYUN LEE ,  YOUNGCHAN KIM

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1463 ,  H01L27/14629 ,  H01L27/14636

Abstract: A CMOS image sensor includes: a substrate including a plurality of unit pixel regions. The substrate includes: a first surface configured to receive light; a second surface opposite to the first surface; a deep device isolation portion disposed in the substrate and configured to isolate the plurality of unit pixel regions from each other, wherein the deep device isolation portion extends from the first surface toward the second surface and has a first depth measured from the first surface; a photoelectric conversion portion formed in the substrate in each of the plurality of unit pixel regions; and a first vertical reflection structure disposed in each of the plurality of unit pixel regions of the substrate and surrounded by the deep device isolation portion in a plan view.

公开(公告)号：US20210199781A1

公开(公告)日：2021-07-01

申请号：US16921060

申请日：2020-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGGU JIN ,  MIN-SUN KEEL ,  DAEYUN KIM ,  YOUNGCHAN KIM

IPC: G01S7/486 ,  G01S17/894 ,  G01S17/18 ,  G01S7/4863 ,  G01S7/481

Abstract: An electronic device includes a time of flight (ToF) sensor including a pixel array, a light source that emits light signals, and an optical device that projects the light signals to areas of an object which respectively correspond to a plurality of pixel blocks including pixels of the pixel array. Each of the pixels includes a plurality of taps each including a photo transistor, a first transfer transistor connected with the photo transistor, a storage element connected with the first transfer transistor, a second transfer transistor connected with the storage element, a floating diffusion area connected with the second transfer transistor, and a readout circuit connected with the floating diffusion area. An overflow transistor is disposed adjacent to the photo transistor and connected with a power supply voltage.

公开(公告)号：US20200279881A1

公开(公告)日：2020-09-03

申请号：US16592840

申请日：2019-10-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUNGGU JIN ,  YOUNGCHAN KIM ,  YONGHUN KWON ,  MOOSUP LIM ,  TAESUB JUNG

IPC: H01L27/146 ,  H04N5/378

Abstract: An image sensor includes a polarizer array and a depth pixel array. The polarizer array may include first to fourth unit pixels, which are arranged in a first direction and a second direction crossing each other, and may include polarization gratings respectively provided in the first to fourth unit pixels. The polarization gratings of the first to fourth unit pixels may have polarization directions different from each other. The depth pixel array may include depth pixels corresponding to the first to fourth unit pixels, respectively. Each of the depth pixels may include a photoelectric conversion device and first and second readout circuits, which are connected in common to the photoelectric conversion device.