公开(公告)号：US20230307482A1

公开(公告)日：2023-09-28

申请号：US18094473

申请日：2023-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGGU JIN ,  SEUNGHYUN LEE ,  YOUNGCHAN KIM

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1463 ,  H01L27/14629 ,  H01L27/14636

Abstract: A CMOS image sensor includes: a substrate including a plurality of unit pixel regions. The substrate includes: a first surface configured to receive light; a second surface opposite to the first surface; a deep device isolation portion disposed in the substrate and configured to isolate the plurality of unit pixel regions from each other, wherein the deep device isolation portion extends from the first surface toward the second surface and has a first depth measured from the first surface; a photoelectric conversion portion formed in the substrate in each of the plurality of unit pixel regions; and a first vertical reflection structure disposed in each of the plurality of unit pixel regions of the substrate and surrounded by the deep device isolation portion in a plan view.

公开(公告)号：US20220406825A1

公开(公告)日：2022-12-22

申请号：US17664863

申请日：2022-05-24

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： YOUNGGU JIN ,  YOUNGSUN OH

IPC: H01L27/146

Abstract: An image sensor includes a pixel isolation structure in a semiconductor substrate. The pixel isolation structure defines a plurality of pixel regions, a photoelectric conversion region in the semiconductor substrate on each of the pixel regions, a floating diffusion region in the semiconductor substrate and spaced apart from the photoelectric conversion region. A transfer gate electrode is disposed between the photoelectric conversion region and the floating diffusion region on each of the pixel regions. A dielectric layer is disposed on the semiconductor substrate and covers the transfer gate electrode. A plurality of active patterns spaced apart from each other is disposed on a top surface of the dielectric layer. A plurality of pixel transistors is disposed on corresponding active patterns. In a plan view, at least one of the active patterns overlaps a portion of the pixel isolation structure.

公开(公告)号：US20190088704A1

公开(公告)日：2019-03-21

申请号：US16132075

申请日：2018-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MIN JANG ,  JUNGCHAK AHN ,  JUNSUNG PARK ,  YOUNGGU JIN

IPC: H01L27/146

Abstract: An image sensor includes a device isolation layer disposed in a substrate and defining pixel regions, and a grid pattern on a surface of the substrate. The grid pattern overlaps the device isolation layer between adjacent pixel regions in a direction perpendicular to the surface. The grid pattern has a width less than a width of the device isolation layer.

公开(公告)号：US20240162258A1

公开(公告)日：2024-05-16

申请号：US18476637

申请日：2023-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGGU JIN

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14643 ,  H01L27/1463 ,  H01L27/14689

Abstract: An image sensor includes a substrate, a vertical gate including a vertical extension vertically extending into the substrate from a top of the substrate, and a horizontal extension extending in parallel with a top surface of the substrate from a top of the vertical extension, a photodiode (PD) disposed under the vertical gate inside the substrate, a spacer disposed between the horizontal extension and the substrate, and a gate insulation layer. A bottom surface and side surfaces of the vertical extension and a bottom surface of the horizontal extension are covered by the gate insulation layer, and the spacer is disposed between the substrate and the gate insulation layer of the horizontal extension.

公开(公告)号：US20230268358A1

公开(公告)日：2023-08-24

申请号：US17993652

申请日：2022-11-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGGU JIN

IPC: H01L27/146

CPC classification number: H01L27/1461 ,  H01L27/14645

Abstract: An image sensor is provided. The image sensor includes: a photoelectric conversion region in a semiconductor substrate; a photocharge collection region provided in the photoelectric conversion region; a floating diffusion region in the semiconductor substrate that is spaced apart from the photocharge collection region along a vertical direction; a charge multiplication region between the photocharge collection region and the floating diffusion region; and a vertical gate electrode which extends into the semiconductor substrate and overlaps the photocharge collection region along the vertical direction. A side surface of the vertical gate electrode is adjacent to the floating diffusion region and the charge multiplication region.

公开(公告)号：US20210199781A1

公开(公告)日：2021-07-01

申请号：US16921060

申请日：2020-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGGU JIN ,  MIN-SUN KEEL ,  DAEYUN KIM ,  YOUNGCHAN KIM

IPC: G01S7/486 ,  G01S17/894 ,  G01S17/18 ,  G01S7/4863 ,  G01S7/481

Abstract: An electronic device includes a time of flight (ToF) sensor including a pixel array, a light source that emits light signals, and an optical device that projects the light signals to areas of an object which respectively correspond to a plurality of pixel blocks including pixels of the pixel array. Each of the pixels includes a plurality of taps each including a photo transistor, a first transfer transistor connected with the photo transistor, a storage element connected with the first transfer transistor, a second transfer transistor connected with the storage element, a floating diffusion area connected with the second transfer transistor, and a readout circuit connected with the floating diffusion area. An overflow transistor is disposed adjacent to the photo transistor and connected with a power supply voltage.

公开(公告)号：US20180182806A1

公开(公告)日：2018-06-28

申请号：US15798387

申请日：2017-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUNGGU JIN ,  CHANGROK MOON ,  DUCKHYUNG LEE ,  SEOKHA LEE

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  G02B27/10 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14685

Abstract: A first substrate includes a plurality of unit pixel regions. A deep trench isolation structure is disposed in the first substrate and isolates each of the plurality of the unit pixel regions from each other. Each of a plurality of photoelectric converters is disposed in one of the plurality of unit pixel regions. A plurality of micro lenses are disposed on the first substrate. A plurality of light splitters are disposed on the first substrate. Each of the plurality of light splitters is disposed between one of the plurality of micro lenses and one of the plurality of photoelectric converters. Each of a plurality of photoelectric-conversion-enhancing layers is disposed between one of the plurality of light splitters and one of the plurality of photoelectric converters.

公开(公告)号：US20140103190A1

公开(公告)日：2014-04-17

申请号：US14026388

申请日：2013-09-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KWANGHYUN LEE ,  TAECHAN KIM ,  TAEYON LEE ,  YOUNGGU JIN

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/1464 ,  H04N5/3355

Abstract: A binary image sensor includes; binary pixels, each having a transistor structure, being coupled between a drain line and a column line and generating a number of photons in response to incident light, sense amplifiers connected to a respective column line and outputting a binary value in response to detecting a voltage corresponding to current flowing to the column line when a gate voltage is applied to a gate line connected to a gate of a binary pixel, and an accumulator configured to accumulate binary values output by the sense amplifiers.

Abstract translation: 二进制图像传感器包括： 每个具有晶体管结构的二进制像素耦合在漏极线和列线之间并且响应于入射光产生多个光子，连接到相应列线的读出放大器和响应于检测到电压而输出二进制值 对应于当栅极电压施加到连接到二进制像素的栅极的栅极线时流到列线的电流，以及累加器，被配置为累积由读出放大器输出的二进制值。

公开(公告)号：US20240063246A1

公开(公告)日：2024-02-22

申请号：US18189349

申请日：2023-03-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGGU JIN

IPC: H01L27/146 ,  H04N25/59 ,  H04N25/531

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H04N25/59 ,  H04N25/531

Abstract: An image sensor includes: n photo diodes which respectively generate electric charges in response to incident light and are adjacent to each other; a first pixel signal output circuit shared by the n photo diodes, converts an amount of the electric charges of each the n photo diodes in order into a first pixel signal in response to a first mode signal and outputs the first pixel signal in order; and a second pixel signal output circuit which comprises a storage region shared by the n photo diodes, converts amounts of the electric charges of the n photo diodes stored together in the storage region or a voltage corresponding to the amounts of the electric charges of the n photo diode into a second pixel signal in response to a second mode signal and outputs the second pixel signal.

公开(公告)号：US20220302191A1

公开(公告)日：2022-09-22

申请号：US17655582

申请日：2022-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGGU JIN ,  EUNSUB SHIM ,  JUNGCHAK AHN

IPC: H01L27/146

Abstract: An image sensor is provided. The image sensor includes a semiconductor substrate including a first surface and a second surface opposite to each other. A semiconductor pattern is disposed on the first surface of the semiconductor substrate and it extends in a first direction perpendicular to the first surface. A buried transmission gate electrode is disposed in a transmission gate trench extending from the first surface of the semiconductor substrate to an interior of the semiconductor substrate. A first gate electrode at least partially surrounds a side wall of the semiconductor pattern and has a ring-shaped horizontal cross-section. A color filter is disposed on the second surface of the semiconductor substrate.