公开(公告)号：US20180152653A1

公开(公告)日：2018-05-31

申请号：US15631278

申请日：2017-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MIN-SUN KEEL ,  KYOUNGMIN KOH ,  SANGHOON HA

IPC: H04N5/363 ,  H04N5/357 ,  H04N5/355 ,  H04N5/345 ,  H04N9/04 ,  H01L27/146

Abstract: An image sensor includes a photoelectric device generating an electric charge from light; a feedback device generating a reset voltage using a predetermined reference voltage; and a pixel circuit generating a pixel voltage using the reset voltage and the electric charge, setting the reset voltage to the reference voltage using the feedback device a first period, and outputting the pixel voltage and the reset voltage during a second period.

公开(公告)号：US20190280038A1

公开(公告)日：2019-09-12

申请号：US16124226

申请日：2018-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MIN-SUN KEEL ,  DOO WON KWON ,  HYUN SURK Ryu ,  YOUNG CHAN KIM ,  YOUNG GU JIN

IPC: H01L27/146 ,  H01L23/00 ,  H04N13/204

Abstract: A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

公开(公告)号：US20190208150A1

公开(公告)日：2019-07-04

申请号：US16172004

申请日：2018-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNG-GU JIN ,  MIN-SUN KEEL ,  YOUNG-CHAN KIM

IPC: H04N5/369 ,  H04N5/351 ,  H04N5/3745

CPC classification number: H04N5/36965 ,  G06T7/521 ,  H04N5/351 ,  H04N5/3745

Abstract: A pixel array in a three-dimensional image sensor includes depth pixels and an ambient light cancellation (ALC) circuit. The depth pixels operate in response to photo control signals having different phases, and generate distance information of an object based on light reflected by the object. The ALC circuit removes an ambient light component from the reflected light, and is shared by the depth pixels. Each depth pixel includes a photoelectric conversion region, a floating diffusion region, a photo gate, and a drain gate. The photoelectric conversion region collects photo charges based on the reflected light. The floating diffusion region accumulates the photo charges. The photo gate is activated in response to one of the photo control signals. The photoelectric conversion region accumulates the photo charges when the photo gate is activated, and the photo charges in the photoelectric conversion region are released when the drain gate is activated.

公开(公告)号：US20240422450A1

公开(公告)日：2024-12-19

申请号：US18400213

申请日：2023-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： MINWOO LEE ,  MIN-SUN KEEL ,  KYUNG-MIN KIM

IPC: H04N25/75 ,  H04N25/76 ,  H04N25/772

Abstract: Disclosed is an image sensor device which includes a first pixel located at a first row and a first column, corresponding to a first color filter, and outputting a first pixel signal through a first column line, a second pixel located at a second row different from the first row and the first column, corresponding to the first color filter, and outputting a second pixel signal through a second column line, and a conversion circuit receiving the first pixel signal through the first column line, receiving the second pixel signal through the second column line, and generating first image data and second image data based on the first pixel signal and the second pixel signal. The first pixel signal and the second pixel signal are respectively output through the first column line and the second column line simultaneously.

公开(公告)号：US20210217802A1

公开(公告)日：2021-07-15

申请号：US17217167

申请日：2021-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MIN-SUN KEEL ,  DOO WON KWON ,  HYUN SURK Ryu ,  YOUNG CHAN KIM ,  YOUNG GU JIN

IPC: H01L27/146 ,  H01L23/00 ,  H04N13/204

Abstract: A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

公开(公告)号：US20210199781A1

公开(公告)日：2021-07-01

申请号：US16921060

申请日：2020-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGGU JIN ,  MIN-SUN KEEL ,  DAEYUN KIM ,  YOUNGCHAN KIM

IPC: G01S7/486 ,  G01S17/894 ,  G01S17/18 ,  G01S7/4863 ,  G01S7/481

Abstract: An electronic device includes a time of flight (ToF) sensor including a pixel array, a light source that emits light signals, and an optical device that projects the light signals to areas of an object which respectively correspond to a plurality of pixel blocks including pixels of the pixel array. Each of the pixels includes a plurality of taps each including a photo transistor, a first transfer transistor connected with the photo transistor, a storage element connected with the first transfer transistor, a second transfer transistor connected with the storage element, a floating diffusion area connected with the second transfer transistor, and a readout circuit connected with the floating diffusion area. An overflow transistor is disposed adjacent to the photo transistor and connected with a power supply voltage.

公开(公告)号：US20200068152A1

公开(公告)日：2020-02-27

申请号：US16667193

申请日：2019-10-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MIN-SUN KEEL ,  KYOUNGMIN KOH ,  SANGHOON HA

IPC: H04N5/363 ,  H01L27/146 ,  H04N5/345 ,  H04N5/355 ,  H04N5/357 ,  H04N5/369 ,  H04N5/3745 ,  H04N9/04

Abstract: An image sensor includes a photoelectric device generating an electric charge from light; a feedback device generating a reset voltage using a predetermined reference voltage; and a pixel circuit generating a pixel voltage using the reset voltage and the electric charge, setting the reset voltage to the reference voltage using the feedback device a first period, and outputting the pixel voltage and the reset voltage during a second period.