公开(公告)号：US20210217802A1

公开(公告)日：2021-07-15

申请号：US17217167

申请日：2021-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MIN-SUN KEEL ,  DOO WON KWON ,  HYUN SURK Ryu ,  YOUNG CHAN KIM ,  YOUNG GU JIN

IPC: H01L27/146 ,  H01L23/00 ,  H04N13/204

Abstract: A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

公开(公告)号：US20190280038A1

公开(公告)日：2019-09-12

申请号：US16124226

申请日：2018-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MIN-SUN KEEL ,  DOO WON KWON ,  HYUN SURK Ryu ,  YOUNG CHAN KIM ,  YOUNG GU JIN

IPC: H01L27/146 ,  H01L23/00 ,  H04N13/204

Abstract: A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

公开(公告)号：US20170180698A1

公开(公告)日：2017-06-22

申请号：US15448686

申请日：2017-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYUNG IL KIM ,  DONG WOOK KWON ,  MIN HO KIM ,  GI SANG LEE ,  SANG BO LEE ,  JIN KYUNG LEE ,  YOUNG GU JIN ,  JIN WUK CHOI

IPC: H04N13/00 ,  G01S17/08 ,  G01S17/89 ,  H04N13/02

CPC classification number: H04N13/10 ,  G01S17/08 ,  G01S17/89 ,  H04N13/106 ,  H04N13/15 ,  H04N13/254 ,  H04N13/257

Abstract: An image capture method performed by a depth sensor includes; emitting a first source signal having a first amplitude towards a scene, and thereafter emitting a second source signal having a second amplitude different from the first amplitude towards the scene, capturing a first image in response to the first source signal and capturing a second image in response to the second source signal, and interpolating the first and second images to generate a final image.

公开(公告)号：US20220199672A1

公开(公告)日：2022-06-23

申请号：US17409842

申请日：2021-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNG GU JIN ,  YOUNG CHAN KIM

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/3745

Abstract: An image sensor, which stores electric charge overflowing from a photoelectric conversion layer, includes: (1) a substrate including a first surface and a second surface, which is opposite to the first surface and upon which light is incident, (2) a photoelectric conversion layer in the substrate, (3) an isolation film disposed on the substrate, along the photoelectric conversion layer, (4) a storage conductive pattern disposed in the isolation film, (5) a transfer gate disposed on a first surface of the substrate, (6) a first impurity-injected area disposed between the photoelectric conversion layer and the isolation film, and (7) a second impurity-injected area disposed on the first surface of the substrate and connected to the transfer gate. The first and second impurity-injected areas are electrically connected.

公开(公告)号：US20180190699A1

公开(公告)日：2018-07-05

申请号：US15704690

申请日：2017-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： TAE YON LEE ,  GWI DEOK LEE ,  MASARU ISHll ,  YOUNG GU JIN

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/361 ,  H04N5/3745

CPC classification number: H01L27/14614 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14638 ,  H01L27/14667 ,  H01L27/14689 ,  H01L27/14812 ,  H04N5/361 ,  H04N5/37452 ,  H04N5/37457 ,  H04N5/378 ,  H04N5/379

Abstract: An image sensor includes a first photoelectric conversion layer that is configured to convert light to a first signal. The image sensor also includes a transfer transistor. The transfer transistor includes a storage node region which stores the first signal. The transfer transistor also includes a transfer gate which transfers the stored first signal, and a floating diffusion region that receives the first signal. The image sensor includes a reset transistor that resets the floating diffusion region, and a drive transistor which receives a pixel voltage. The drive transistor generates an output voltage. The image sensor also includes a selection transistor which outputs the output voltage. A reset drain voltage is applied to a drain electrode of the reset transistor, and is independent of the pixel voltage. The reset drain voltage ranges from about 0.1V to about 1.0V.