公开(公告)号：US20180182806A1

公开(公告)日：2018-06-28

申请号：US15798387

申请日：2017-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUNGGU JIN ,  CHANGROK MOON ,  DUCKHYUNG LEE ,  SEOKHA LEE

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  G02B27/10 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14685

Abstract: A first substrate includes a plurality of unit pixel regions. A deep trench isolation structure is disposed in the first substrate and isolates each of the plurality of the unit pixel regions from each other. Each of a plurality of photoelectric converters is disposed in one of the plurality of unit pixel regions. A plurality of micro lenses are disposed on the first substrate. A plurality of light splitters are disposed on the first substrate. Each of the plurality of light splitters is disposed between one of the plurality of micro lenses and one of the plurality of photoelectric converters. Each of a plurality of photoelectric-conversion-enhancing layers is disposed between one of the plurality of light splitters and one of the plurality of photoelectric converters.