公开(公告)号：US20230268366A1

公开(公告)日：2023-08-24

申请号：US18097749

申请日：2023-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungki BAEK ,  KYUNGHO LEE ,  TAESUB JUNG ,  SEUNGKI JUNG ,  JUNGHYUNG PYO

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14636

Abstract: An image sensor includes a substrate including a pixel region, the substrate extending in a first direction and a second direction intersecting the first direction, first and second photoelectric conversion regions disposed in the pixel region and adjacent to each other in a first direction, a deep device isolation pattern penetrating the substrate in a third direction perpendicular to the first and second directions, and surrounding the pixel region, the deep device isolation pattern comprising first extensions extending in the second direction between the first and second photoelectric conversion regions, the first extensions spaced apart from each other in the second direction, a plurality of first transfer gate electrodes vertically overlapping with the first photoelectric conversion region, and a plurality of second transfer gate electrodes vertically overlapping with the second photoelectric conversion region. The first photoelectric conversion region extends in the second direction under the plurality of first transfer gate electrodes.