IMAGE SENSOR WITH VARYING GRID WIDTH

    公开(公告)号:US20240405045A1

    公开(公告)日:2024-12-05

    申请号:US18777300

    申请日:2024-07-18

    Abstract: An image sensor in which a shading phenomenon is decreased and the quality is increased includes a substrate comprising a first face on which light is incident, and a second face opposite to the first face and a plurality of unit pixels. Each of the plurality of unit pixels includes a photoelectric conversion layer in the substrate. The image sensor further includes a pixel separation pattern which separates unit pixels from the plurality of the unit pixels from each other, a plurality of color filters disposed on the first face of the substrate and arranged in a Bayer pattern, and a grid pattern disposed on the first face of the substrate and interposed within the plurality of color filters. A light-receiving area of the red color filter and a light-receiving area of the blue color filter are smaller than a light-receiving area of the green color filter.

    IMAGE SENSOR
    3.
    发明申请

    公开(公告)号:US20220262840A1

    公开(公告)日:2022-08-18

    申请号:US17739640

    申请日:2022-05-09

    Abstract: An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other; a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.

    IMAGE SENSOR
    5.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号:US20200227455A1

    公开(公告)日:2020-07-16

    申请号:US16711295

    申请日:2019-12-11

    Abstract: An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other; a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.

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