公开(公告)号：US20190259881A1

公开(公告)日：2019-08-22

申请号：US16400443

申请日：2019-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuk Kim ,  Dae Hyun Jang ,  Seung Pil Chung ,  Sung II Cho

IPC: H01L29/792 ,  H01L29/66 ,  H01L29/10 ,  H01L27/11578 ,  H01L21/28 ,  H01L27/11556

Abstract: A vertical memory device and a method of manufacturing such device are provided. The vertical memory device may include a plurality of gate electrode layers stacked in a cell region of a semiconductor substrate; a plurality of upper isolation insulating layers dividing an uppermost gate electrode layer among the plurality of gate electrode layers, extending in a first direction; a plurality of vertical holes arranged to have any two adjacent vertical holes to have a uniform distance from each other throughout the cell region and including a plurality of channel holes penetrating through the plurality of gate electrode layers disposed between the plurality of upper isolation insulating layers and a plurality of first support holes penetrating through the plurality of upper insulating layers; a plurality of channel structures disposed in the plurality of channel holes; and a plurality of first support structures disposed in the plurality of first support holes.

公开(公告)号：US20190323126A1

公开(公告)日：2019-10-24

申请号：US16178023

申请日：2018-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Edward Sung ,  Jin Young Bang ,  Hyuk Kim ,  Sung II Cho

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/44

Abstract: A showerhead according to an embodiment of the present inventive concept includes an upper plate including a plurality of gas supply passages, a lower plate including a plurality of supply holes and a plurality of exhaust slots formed in a lower surface, and a plurality of partition walls between the upper plate and the lower plate, connected to a plurality of exhaust slots and defining exhaust passages that are open at a side portion of the showerhead.

公开(公告)号：US10749042B2

公开(公告)日：2020-08-18

申请号：US16400443

申请日：2019-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuk Kim ,  Dae Hyun Jang ,  Seung Pil Chung ,  Sung II Cho

IPC: H01L29/792 ,  H01L29/10 ,  H01L29/66 ,  H01L27/11556 ,  H01L27/11578 ,  H01L21/28 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/11573

Abstract: A vertical memory device and a method of manufacturing such device are provided. The vertical memory device may include a plurality of gate electrode layers stacked in a cell region of a semiconductor substrate; a plurality of upper isolation insulating layers dividing an uppermost gate electrode layer among the plurality of gate electrode layers, extending in a first direction; a plurality of vertical holes arranged to have any two adjacent vertical holes to have a uniform distance from each other throughout the cell region and including a plurality of channel holes penetrating through the plurality of gate electrode layers disposed between the plurality of upper isolation insulating layers and a plurality of first support holes penetrating through the plurality of upper insulating layers; a plurality of channel structures disposed in the plurality of channel holes; and a plurality of first support structures disposed in the plurality of first support holes.

公开(公告)号：US20190066983A1

公开(公告)日：2019-02-28

申请号：US15945001

申请日：2018-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Edward Sung ,  Hyuk Kim ,  Daehyun Jang ,  Sung II Cho

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: Shrouds and substrate treating systems including the same are provided. Substrate treating systems may include a process chamber, a supporter, and a plasma source that is spaced apart from the supporter in a vertical direction. The substrate treating systems may also include a shroud configured to contain the plasma therein. The shroud may include a sidewall portion and a first flange portion extending horizontally from the sidewall portion and including a plurality of first slits that extend through a thickness of the first flange portion. The first flange portion may define a first opening, and a portion of the supporter may extend through the first opening. The sidewall portion may include a plurality of second slits, and each of the plurality of second slits may extend through a thickness of the sidewall portion and may extend from one of the plurality of first slits toward the plasma source.