公开(公告)号：US20230205423A1

公开(公告)日：2023-06-29

申请号：US18087464

申请日：2022-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heeyeon TAK ,  Hyunseon Park ,  Heehyun Nam ,  Sumin Ahn ,  Wansoo Choi

IPC: G06F3/06

CPC classification number: G06F3/0613 ,  G06F3/0656 ,  G06F3/0679

Abstract: A memory system includes a memory device including a memory cell array, a first latch, a plurality of program latches, and a second latch and a memory controller configured to provide a command to the memory device. The memory device may sense first data from a first region of the memory cell array, store the sensed first data in the first latch, transfer the sensed first data to the second latch, output the first data from the second latch to the memory controller, and transfer the first data from the second latch to a first program latch of the plurality of program latches, in response to a first read command.

公开(公告)号：US12001683B2

公开(公告)日：2024-06-04

申请号：US18087464

申请日：2022-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heeyeon Tak ,  Hyunseon Park ,  Heehyun Nam ,  Sumin Ahn ,  Wansoo Choi

IPC: G06F3/06

CPC classification number: G06F3/0613 ,  G06F3/0656 ,  G06F3/0679

Abstract: A memory system includes a memory device including a memory cell array, a first latch, a plurality of program latches, and a second latch and a memory controller configured to provide a command to the memory device. The memory device may sense first data from a first region of the memory cell array, store the sensed first data in the first latch, transfer the sensed first data to the second latch, output the first data from the second latch to the memory controller, and transfer the first data from the second latch to a first program latch of the plurality of program latches, in response to a first read command.

公开(公告)号：US11817405B2

公开(公告)日：2023-11-14

申请号：US17496488

申请日：2021-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sumin Ahn ,  Byungjun Kang ,  Jiyoung Kim ,  Hae Seok Park ,  Chulsoon Chang

IPC: H01L23/00 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L24/02 ,  H01L21/481 ,  H01L23/49822 ,  H01L23/49894 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0221 ,  H01L2224/02206 ,  H01L2224/02215 ,  H01L2224/02311 ,  H01L2224/05548 ,  H01L2224/13024 ,  H01L2224/16227

Abstract: Disclosed are semiconductor devices and their fabricating methods. The semiconductor device comprises a dielectric layer, a trench formed in the dielectric layer, a metal pattern that conformally covers a top surface of the dielectric layer, an inner side surface of the trench, and a bottom surface of the trench, a first protection layer that conformally covers the metal pattern, and a second protection layer that covers the first protection layer. A cavity is formed in the trench. The cavity is surrounded by the first protection layer. The first protection layer has an opening that penetrates the first protection layer and extends from a top surface of the first protection layer. The opening is connected to the cavity. A portion of the second protection layer extends into the opening and closes the cavity.

公开(公告)号：US11797221B2

公开(公告)日：2023-10-24

申请号：US17473062

申请日：2021-09-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sumin Ahn ,  Jinseok Kim ,  Jungjeong Jo

IPC: G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/0604 ,  G06F3/0679

Abstract: In a method of operating a storage device, a first throughput, for transmitting a plurality of write command completion responses to an external host device, is set to an initial value. The plurality of write command completion responses represent an execution of a plurality of write commands received from the external host device. The plurality of write commands are executed. The plurality of write command completion responses are transmitted to the external host device based on the first throughput that is set to the initial value. A plurality of write data are internally stored based on the plurality of write commands. A second throughput, associated with an operation of internally storing the plurality of write data, is monitored during a predetermined first time interval. The first throughput is changed based on the second throughput that is monitored during the predetermined first time interval.

公开(公告)号：US11119693B2

公开(公告)日：2021-09-14

申请号：US16810478

申请日：2020-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sumin Ahn ,  Jinseok Kim ,  Jungjeong Jo

IPC: G06F3/06

Abstract: In a method of operating a storage device, a first throughput, for transmitting a plurality of write command completion responses to an external host device, is set to an initial value. The plurality of write command completion responses represent an execution of a plurality of write commands received from the external host device. The plurality of write commands are executed. The plurality of write command completion responses are transmitted to the external host device based on the first throughput that is set to the initial value. A plurality of write data are internally stored based on the plurality of write commands. A second throughput, associated with an operation of internally storing the plurality of write data, is monitored during a predetermined first time interval. The first throughput is changed based on the second throughput that is monitored during the predetermined first time interval.