公开(公告)号：US20230205423A1

公开(公告)日：2023-06-29

申请号：US18087464

申请日：2022-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heeyeon TAK ,  Hyunseon Park ,  Heehyun Nam ,  Sumin Ahn ,  Wansoo Choi

IPC: G06F3/06

CPC classification number: G06F3/0613 ,  G06F3/0656 ,  G06F3/0679

Abstract: A memory system includes a memory device including a memory cell array, a first latch, a plurality of program latches, and a second latch and a memory controller configured to provide a command to the memory device. The memory device may sense first data from a first region of the memory cell array, store the sensed first data in the first latch, transfer the sensed first data to the second latch, output the first data from the second latch to the memory controller, and transfer the first data from the second latch to a first program latch of the plurality of program latches, in response to a first read command.