公开(公告)号：US11817405B2

公开(公告)日：2023-11-14

申请号：US17496488

申请日：2021-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sumin Ahn ,  Byungjun Kang ,  Jiyoung Kim ,  Hae Seok Park ,  Chulsoon Chang

IPC: H01L23/00 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L24/02 ,  H01L21/481 ,  H01L23/49822 ,  H01L23/49894 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0221 ,  H01L2224/02206 ,  H01L2224/02215 ,  H01L2224/02311 ,  H01L2224/05548 ,  H01L2224/13024 ,  H01L2224/16227

Abstract: Disclosed are semiconductor devices and their fabricating methods. The semiconductor device comprises a dielectric layer, a trench formed in the dielectric layer, a metal pattern that conformally covers a top surface of the dielectric layer, an inner side surface of the trench, and a bottom surface of the trench, a first protection layer that conformally covers the metal pattern, and a second protection layer that covers the first protection layer. A cavity is formed in the trench. The cavity is surrounded by the first protection layer. The first protection layer has an opening that penetrates the first protection layer and extends from a top surface of the first protection layer. The opening is connected to the cavity. A portion of the second protection layer extends into the opening and closes the cavity.