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1.发明授权公开(公告)号：US09478729B2
公开(公告)日：2016-10-25
申请号：US14814163
申请日：2015-07-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-Jin Lee , Soo-Man Seo
CPC classification number: H01L43/02 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10
Abstract: The present invention relates to a magnetic memory device which additionally comprises a free magnetic layer constituting a horizontal direction variable magnetization layer having a fixed saturation magnetization value, whereby a switching current is markedly reduced as compared with conventional magnetic layers such that a high degree of integration of the device can be achieved and it is possible to lower a critical current density necessary for magnetization reversal thereby reducing the power consumption of the device. Also, a stray field effect occurring from a fixed magnetic layer is reduced such that a written magnetization data is thermally stable.
Abstract translation: 本发明涉及一种磁存储器件，其还包括构成具有固定的饱和磁化值的水平方向可变磁化层的自由磁性层，由此与常规磁性层相比，开关电流显着降低，使得高度集成 的器件，并且可以降低磁化反转所需的临界电流密度，从而降低器件的功耗。 此外，从固定磁性层发生的杂散场效应减小，使得写入的磁化数据是热稳定的。
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2.发明申请SPIN TRANSFER TORQUE MAGNETIC MEMORY DEVICE USING MAGNETIC RESONANCE PRECESSION AND THE SPIN FILTERING EFFECT 有权使用磁共振预测和旋转过滤效果的转子转子磁力记忆装置公开(公告)号：US20150340595A1
公开(公告)日：2015-11-26
申请号：US14814163
申请日：2015-07-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-Jin Lee , Soo-Man Seo
CPC classification number: H01L43/02 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10
Abstract: The present invention relates to a magnetic memory device which additionally comprises a free magnetic layer constituting a horizontal direction variable magnetization layer having a fixed saturation magnetization value, whereby a switching current is markedly reduced as compared with conventional magnetic layers such that a high degree of integration of the device can be achieved and it is possible to lower a critical current density necessary for magnetization reversal thereby reducing the power consumption of the device. Also, a stray field effect occurring from a fixed magnetic layer is reduced such that a written magnetization data is thermally stable.
Abstract translation: 本发明涉及一种磁存储器件，其还包括构成具有固定的饱和磁化值的水平方向可变磁化层的自由磁性层，由此与常规磁性层相比，开关电流显着降低，使得高度集成 的器件，并且可以降低磁化反转所需的临界电流密度，从而降低器件的功耗。 此外，从固定磁性层发生的杂散场效应减小，使得写入的磁化数据是热稳定的。
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