Invention Grant
- Patent Title: Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect
- Patent Title (中): 旋转转矩磁记忆装置采用磁共振进动和自旋滤波效果
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Application No.: US14814163Application Date: 2015-07-30
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Publication No.: US09478729B2Publication Date: 2016-10-25
- Inventor: Kyung-Jin Lee , Soo-Man Seo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, P.A.
- Priority: KR10-2011-0044587 20110512
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L21/02 ; H01L29/66 ; G11C11/00 ; H01L43/02 ; H01L43/10 ; G11C11/16 ; H01L43/08
Abstract:
The present invention relates to a magnetic memory device which additionally comprises a free magnetic layer constituting a horizontal direction variable magnetization layer having a fixed saturation magnetization value, whereby a switching current is markedly reduced as compared with conventional magnetic layers such that a high degree of integration of the device can be achieved and it is possible to lower a critical current density necessary for magnetization reversal thereby reducing the power consumption of the device. Also, a stray field effect occurring from a fixed magnetic layer is reduced such that a written magnetization data is thermally stable.
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