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公开(公告)号：US09501238B2
公开(公告)日：2016-11-22
申请号：US14554369
申请日：2014-11-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sunghwan Yun , Seijin Kim
IPC: G06F3/06
CPC classification number: G06F3/0632 , G06F3/0605 , G06F3/0679
Abstract: A method of managing a memory by an electronic device is provided. The method includes configuring a swap data amount per unit time, identifying an actual use amount of swap data, and comparing the identified actual use amount of the swap data with the configured swap data amount per unit time.
Abstract translation: 提供了一种通过电子设备管理存储器的方法。 该方法包括配置每单位时间的交换数据量，识别交换数据的实际使用量，以及将所识别的交换数据的实际使用量与每单位时间内配置的交换数据量进行比较。
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公开(公告)号：US10049999B2
公开(公告)日：2018-08-14
申请号：US14514955
申请日：2014-10-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seijin Kim
IPC: H01L23/48 , H01L23/00 , H01L23/14 , H01L23/538 , H01L25/065 , H01L23/498
CPC classification number: H01L24/16 , H01L23/147 , H01L23/49816 , H01L23/5384 , H01L23/5385 , H01L25/065 , H01L25/0657 , H01L25/18 , H01L2224/131 , H01L2224/16146 , H01L2224/16227 , H01L2224/16235 , H01L2224/81815 , H01L2225/06517 , H01L2225/06527 , H01L2225/06548 , H01L2225/06562 , H01L2225/06572 , H01L2924/15192 , H01L2924/15311 , H01L2924/37001 , H01L2924/00014 , H01L2924/014
Abstract: A semiconductor device and electronic device comprising the same includes at least one dummy chip having at least one Through Silicon Via (TSV), and at least one active chip connected to the at least one dummy chip. The at least one active chip exchanges an electrical signal through the at least one TSV. The at least one active chip may be a memory chip and a non-memory chip in a vertically stacked (3D) configuration, connected through an electrical path that includes the TSV of the dummy chip. Embodiments may include multiple memory chips and dummy chips.
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公开(公告)号：US09767061B2
公开(公告)日：2017-09-19
申请号：US14518035
申请日：2014-10-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seijin Kim
CPC classification number: G06F13/4027 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/17181 , H01L2224/48227 , H01L2224/73257 , H01L2924/12044 , Y02D10/14 , Y02D10/151 , H01L2924/00
Abstract: An electronic device includes: a communication module; an input module; a display; an interface; at least one sensor; a memory; and a processor module. The processor module includes at least one of: at least one dummy chip including at least one Through Silicon Via (TSV); at least one memory bridge including at least one TSV; at least one memory connected to the at least one dummy chip and the at least one memory bridge and that can exchange an electric signal through the at least one dummy chip and the at least one memory bridge; or at least one processor. The at least one processor may be configured to exchange an electric signal through the at least one memory bridge, and to transmit an electric signal to at least one of the communication module, input module, display, interface, at least one sensor, or first memory. The at least one processor may exchange information via a circuit path that includes at least one of the memory bridge and a portion of the at least one memory, when transmitting the electric signal.
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公开(公告)号：US08976580B2
公开(公告)日：2015-03-10
申请号：US13783850
申请日：2013-03-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chul-Ho Lee , Seijin Kim
CPC classification number: G11C13/0004 , G11C11/16 , G11C11/1675 , G11C16/20 , G11C2213/79
Abstract: A memory system comprises a nonvolatile memory and a phase change memory. The memory system can be operated by reading operation information of the nonvolatile memory from the phase change memory, adjusting voltage parameters of the nonvolatile memory based on the read operation information, and performing an operation of the nonvolatile memory based on the adjusted voltage parameters.
Abstract translation: 存储器系统包括非易失性存储器和相变存储器。 可以通过从相变存储器读取非易失性存储器的操作信息，基于读取的操作信息来调整非易失性存储器的电压参数，并且基于经调整的电压参数来执行非易失性存储器的操作来操作存储器系统。
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