公开(公告)号：US20190324937A1

公开(公告)日：2019-10-24

申请号：US16457382

申请日：2019-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-jae Han ,  Gwang-man Lim ,  II-mok Kang ,  Sang-chul Kang ,  Seok-cheon Kwon ,  Seok-chan Lee

IPC: G06F13/40 ,  G06K19/077 ,  G11C5/14 ,  G06K13/08 ,  G06F13/16

Abstract: Provided is a memory card, which includes two pairs of opposite edges, first row terminals arranged adjacent to an insertion-side edge of the memory card, and second row terminals arranged apart from the insertion-side edge of the memory card. The memory card can be easily reset in terms of software without controlling power supply in terms of hardware. Also, the memory card can be smoothly attached and detached during insertion of the memory card into a socket and reduce damage to a device.

公开(公告)号：US20140321209A1

公开(公告)日：2014-10-30

申请号：US14330142

申请日：2014-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-jin Yun ,  Sang-chul Kang

IPC: G11C16/24 ,  G11C16/04

CPC classification number: G11C16/24 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/26 ,  G11C16/3404

Abstract: A nonvolatile memory device comprises a memory cell array and a voltage generator. The memory cell array comprises a plurality of memory cells connected in series between a string selection transistor connected to a bit line and a ground selection transistor connected to a source line. The voltage generator provides read voltages to word lines of memory cells selected from among the plurality of memory cells during a read operation. The read voltages of the selected memory cells differ from each other according to their respective distances from the string selection transistor.

Abstract translation: 非易失性存储器件包括存储单元阵列和电压发生器。 存储单元阵列包括串联连接到位线的串选择晶体管和连接到源极线的地选择晶体管之间的多个存储单元。 在读取操作期间，电压发生器向从多个存储单元中选择的存储器单元的字线提供读取电压。 所选择的存储单元的读取电压根据其与串选择晶体管的相应距离而彼此不同。

公开(公告)号：US10380055B2

公开(公告)日：2019-08-13

申请号：US15322987

申请日：2015-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-jae Han ,  Gwang-man Lim ,  Il-mok Kang ,  Sang-chul Kang ,  Seok-cheon Kwon ,  Seok-chan Lee

IPC: G06F13/12 ,  G06F13/40 ,  G06K13/08 ,  G06K19/077 ,  G06F13/16 ,  G11C5/14

Abstract: Provided is a memory card, which includes two pairs of opposite edges, first row terminals arranged adjacent to an insertion-side edge of the memory card, and second row terminals arranged apart from the insertion-side edge of the memory card. The memory card can be easily reset in terms of software without controlling power supply in terms of hardware. Also, the memory card can be smoothly attached and detached during insertion of the memory card into a socket and reduce damage to a device.

公开(公告)号：US20170154003A1

公开(公告)日：2017-06-01

申请号：US15322987

申请日：2015-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-jae Han ,  Gawang-man Lim ,  II-mok Kang ,  Sang-chul Kang ,  Seok-cheon Kwon ,  Seok-chan Lee

IPC: G06F13/40 ,  G11C5/14 ,  G06F13/16

CPC classification number: G06F13/4068 ,  G06F13/1668 ,  G06K13/08 ,  G06K19/07732 ,  G06K19/07743 ,  G11C5/14

Abstract: Provided is a memory card, which includes two pairs of opposite edges, first row terminals arranged adjacent to an insertion-side edge of the memory card, and second row terminals arranged apart from the insertion-side edge of the memory card. The memory card can be easily reset in terms of software without controlling power supply in terms of hardware. Also, the memory card can be smoothly attached and detached during insertion of the memory card into a socket and reduce damage to a device.

公开(公告)号：US09437313B2

公开(公告)日：2016-09-06

申请号：US14330142

申请日：2014-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-jin Yun ,  Sang-chul Kang

IPC: G11C16/24 ,  G11C16/06 ,  G11C16/04 ,  G11C16/26 ,  G11C16/34 ,  G11C11/56

CPC classification number: G11C16/24 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/26 ,  G11C16/3404

Abstract: A nonvolatile memory device comprises a memory cell array and a voltage generator. The memory cell array comprises a plurality of memory cells connected in series between a string selection transistor connected to a bit line and a ground selection transistor connected to a source line. The voltage generator provides read voltages to word lines of memory cells selected from among the plurality of memory cells during a read operation. The read voltages of the selected memory cells differ from each other according to their respective distances from the string selection transistor.

Abstract translation: 非易失性存储器件包括存储单元阵列和电压发生器。 存储单元阵列包括串联连接到位线的串选择晶体管和连接到源极线的地选择晶体管之间的多个存储单元。 在读取操作期间，电压发生器向从多个存储单元中选择的存储器单元的字线提供读取电压。 所选择的存储单元的读取电压根据其与串选择晶体管的相应距离而彼此不同。