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    NON-VOLATILE MEMORY DEVICE AND RELATED READ METHOD
    4.
    发明申请
    NON-VOLATILE MEMORY DEVICE AND RELATED READ METHOD 审中-公开
    非易失性存储器件及相关读取方法

    公开(公告)号：US20140321209A1

    公开(公告)日：2014-10-30

    申请号：US14330142

    申请日：2014-07-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eun-jin Yun ,  Sang-chul Kang

    IPC: G11C16/24 ,  G11C16/04

    CPC classification number: G11C16/24 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/26 ,  G11C16/3404

    Abstract: A nonvolatile memory device comprises a memory cell array and a voltage generator. The memory cell array comprises a plurality of memory cells connected in series between a string selection transistor connected to a bit line and a ground selection transistor connected to a source line. The voltage generator provides read voltages to word lines of memory cells selected from among the plurality of memory cells during a read operation. The read voltages of the selected memory cells differ from each other according to their respective distances from the string selection transistor.

    Abstract translation: 非易失性存储器件包括存储单元阵列和电压发生器。 存储单元阵列包括串联连接到位线的串选择晶体管和连接到源极线的地选择晶体管之间的多个存储单元。 在读取操作期间，电压发生器向从多个存储单元中选择的存储器单元的字线提供读取电压。 所选择的存储单元的读取电压根据其与串选择晶体管的相应距离而彼此不同。

    Non-volatile memory device and related read method using adjustable bit line connection signal
    7.
    发明授权
    Non-volatile memory device and related read method using adjustable bit line connection signal 有权
    非易失性存储器件和相关的读取方法使用可调位线连接信号

    公开(公告)号：US09437313B2

    公开(公告)日：2016-09-06

    申请号：US14330142

    申请日：2014-07-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eun-jin Yun ,  Sang-chul Kang

    IPC: G11C16/24 ,  G11C16/06 ,  G11C16/04 ,  G11C16/26 ,  G11C16/34 ,  G11C11/56

    CPC classification number: G11C16/24 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/26 ,  G11C16/3404

    Abstract: A nonvolatile memory device comprises a memory cell array and a voltage generator. The memory cell array comprises a plurality of memory cells connected in series between a string selection transistor connected to a bit line and a ground selection transistor connected to a source line. The voltage generator provides read voltages to word lines of memory cells selected from among the plurality of memory cells during a read operation. The read voltages of the selected memory cells differ from each other according to their respective distances from the string selection transistor.

    Abstract translation: 非易失性存储器件包括存储单元阵列和电压发生器。 存储单元阵列包括串联连接到位线的串选择晶体管和连接到源极线的地选择晶体管之间的多个存储单元。 在读取操作期间，电压发生器向从多个存储单元中选择的存储器单元的字线提供读取电压。 所选择的存储单元的读取电压根据其与串选择晶体管的相应距离而彼此不同。

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