公开(公告)号：US20200072874A1

公开(公告)日：2020-03-05

申请号：US16261175

申请日：2019-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNG DO KIM ,  SUNG YONG LIM ,  CHAN SOO KANG ,  DO HOON KWON ,  MIN JU KIM ,  SANG KI NAM ,  JUNG MO YANG ,  JONG HUN PI ,  KYU HEE HAN

IPC: G01R15/18 ,  G01R15/16 ,  H01F27/28 ,  H05H1/46

Abstract: An RF sensing apparatus configured for use with a plasma processing chamber includes a penetration unit opened in an up/down direction, a main return path unit surrounding all or a portion of the penetration unit, and a secondary return path unit located between the penetration unit and the main return path unit, spaced apart from the main return path unit, and surrounding all or a portion of the penetration unit. The main return path unit and the secondary return path unit include a path through which a current flows in one of the up/down directions.

公开(公告)号：US20210057193A1

公开(公告)日：2021-02-25

申请号：US17091433

申请日：2020-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG KI NAM ,  SUNGGIL KANG ,  SUNGYONG LIM ,  BEOMJIN YOO ,  AKIRA KOSHIISHI ,  VASILY PASHKOVSKIY ,  KWANGYOUB HEO

IPC: H01J37/32 ,  H01J1/02

Abstract: A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.

公开(公告)号：US20250104969A1

公开(公告)日：2025-03-27

申请号：US18640332

申请日：2024-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUN BAE KIM ,  JUHO LEE ,  HYEONGMO KANG ,  KYUNG-SUN KIM ,  NAM KYUN KIM ,  DONGHYEON NA ,  SANG KI NAM ,  HYUNJAE LEE ,  HYUNHAK JEONG

IPC: H01J37/32

Abstract: A substrate processing method including: placing a substrate in a substrate processing apparatus; applying source power to the substrate processing apparatus; and applying bias power to the substrate processing apparatus, wherein applying the source power to the substrate processing apparatus includes: providing the substrate processing apparatus with a first radio-frequency (RF) power with a first pulse having a first period; and providing the substrate processing apparatus with a second RF power with a second pulse having a second period, wherein the first period is longer than the second period.

公开(公告)号：US20230143327A1

公开(公告)日：2023-05-11

申请号：US17850478

申请日：2022-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： DONGSEOK HAN ,  Seunghan BAEK ,  KYUNG-SUN KIM ,  Nam Kyun KIM ,  SANG KI NAM ,  KUIHYUN YOON ,  KANGMIN JEON

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32642 ,  H01J37/32724 ,  H01J37/32807 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/334

Abstract: Disclosed are focus rings, substrate processing apparatuses including the same, and substrate processing methods using the same. The focus ring comprises a first ring formed around an axis that extends in a first direction and a second ring separate from the first ring and formed around the axis. A portion of an inner lateral surface of the second ring is in contact with a portion of an outer lateral surface of the first ring. When viewed from a cross-sectional view from a direction perpendicular to the axis, a first angle between the outer lateral surface and the first direction is different from a second angle between the inner lateral surface and the first direction.