公开(公告)号：US20250104969A1

公开(公告)日：2025-03-27

申请号：US18640332

申请日：2024-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUN BAE KIM ,  JUHO LEE ,  HYEONGMO KANG ,  KYUNG-SUN KIM ,  NAM KYUN KIM ,  DONGHYEON NA ,  SANG KI NAM ,  HYUNJAE LEE ,  HYUNHAK JEONG

IPC: H01J37/32

Abstract: A substrate processing method including: placing a substrate in a substrate processing apparatus; applying source power to the substrate processing apparatus; and applying bias power to the substrate processing apparatus, wherein applying the source power to the substrate processing apparatus includes: providing the substrate processing apparatus with a first radio-frequency (RF) power with a first pulse having a first period; and providing the substrate processing apparatus with a second RF power with a second pulse having a second period, wherein the first period is longer than the second period.