公开(公告)号：US20220165552A1

公开(公告)日：2022-05-26

申请号：US17380806

申请日：2021-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： NAM KYUN KIM ,  TAE-SUN SHIN ,  DEOKJIN KWON ,  DONGHYEON NA ,  SEUNGBO SHIM ,  SUNGYONG LIM ,  MINJOON KIM ,  JIN YOUNG BANG ,  BONGJU LEE ,  JINSEOK LEE ,  SUNGIL CHO ,  CHUNGHO CHO

IPC: H01J37/32 ,  H01L21/26 ,  H01L21/683

Abstract: A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.

公开(公告)号：US20230005723A1

公开(公告)日：2023-01-05

申请号：US17709613

申请日：2022-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGDO KIM ,  SUNGYONG LIM ,  DAEWON KANG ,  SUNGYEOL KIM ,  SANGKI NAM ,  MYUNGGEUN SONG ,  BYUNGKOOK CHO ,  HYEONCHEOL JIN ,  JONGHUN PI

IPC: H01J37/32

Abstract: A semiconductor processing system includes: a semiconductor processing chamber including an electrostatic chuck disposed in a chamber housing, and a first power supplier for supplying first radio frequency (RF) power to an internal electrode disposed in the electrostatic chuck; a voltage measuring device for measuring a voltage corresponding to the first RF power to output a digital signal; and a control device for outputting an interlock control signal to the semiconductor processing chamber, when it is determined that the voltage increases to be within a predetermined reference range based on the digital signal. The electrostatic chuck is configured to enable a wafer to be seated on a surface of the electrostatic chuck.

公开(公告)号：US20210057193A1

公开(公告)日：2021-02-25

申请号：US17091433

申请日：2020-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG KI NAM ,  SUNGGIL KANG ,  SUNGYONG LIM ,  BEOMJIN YOO ,  AKIRA KOSHIISHI ,  VASILY PASHKOVSKIY ,  KWANGYOUB HEO

IPC: H01J37/32 ,  H01J1/02

Abstract: A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.