公开(公告)号：US20230023711A1

公开(公告)日：2023-01-26

申请号：US17733143

申请日：2022-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYUBONG CHOI ,  YEONHO PARK ,  JUNMO PARK ,  EUNSIL PARK ,  JUNSEOK LEE ,  JINSEOK LEE ,  WANGSEOP LIM

IPC: H01L27/118 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor device is provided. The semiconductor device includes: first, second and third active patterns on a logic cell region of a substrate and are spaced apart from each other in a first direction; first and second gate electrodes, the first gate electrode crossing the first active pattern and the second gate electrode crossing the second active pattern; a first separation pattern provided between the first and second active patterns; a second separation pattern provided between the second and third active patterns; a first gate insulating layer interposed between the first gate electrode and the first active pattern; and a first gate cutting pattern interposed between the first and second gate electrodes, and in contact with a top surface of the first separation pattern. The first separation pattern is wider than the second separation pattern, and the first gate insulating layer extends between the first gate electrode and the first separation pattern, and contacts side and top surfaces of the first separation pattern.

公开(公告)号：US20220165552A1

公开(公告)日：2022-05-26

申请号：US17380806

申请日：2021-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： NAM KYUN KIM ,  TAE-SUN SHIN ,  DEOKJIN KWON ,  DONGHYEON NA ,  SEUNGBO SHIM ,  SUNGYONG LIM ,  MINJOON KIM ,  JIN YOUNG BANG ,  BONGJU LEE ,  JINSEOK LEE ,  SUNGIL CHO ,  CHUNGHO CHO

IPC: H01J37/32 ,  H01L21/26 ,  H01L21/683

Abstract: A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.