公开(公告)号：US20190088491A1

公开(公告)日：2019-03-21

申请号：US16021100

申请日：2018-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGSIK SEO ,  SUNGIL CHO

IPC: H01L21/308 ,  H01L27/108 ,  H01L21/02 ,  H01L21/762 ,  H01L29/66

Abstract: A method for manufacturing a semiconductor device includes providing a substrate structure. The method includes forming a lower sacrificial layer, a lower supporter layer, an upper sacrificial layer, and an upper supporter layer which are sequentially stacked on the substrate structure. The method includes forming a mask pattern on the upper supporter layer; forming an upper supporter pattern by etching the upper supporter layer using the mask pattern as an etch mask. The method includes forming a recess region penetrating the upper supporter pattern, the upper sacrificial layer, the lower supporter layer, and the lower sacrificial layer, and removing the lower sacrificial layer and the upper sacrificial layer. The mask pattern is removed during the process of forming the upper supporter pattern. And, when the process of forming the recess region ends, the upper supporter pattern remains.

公开(公告)号：US20220165552A1

公开(公告)日：2022-05-26

申请号：US17380806

申请日：2021-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： NAM KYUN KIM ,  TAE-SUN SHIN ,  DEOKJIN KWON ,  DONGHYEON NA ,  SEUNGBO SHIM ,  SUNGYONG LIM ,  MINJOON KIM ,  JIN YOUNG BANG ,  BONGJU LEE ,  JINSEOK LEE ,  SUNGIL CHO ,  CHUNGHO CHO

IPC: H01J37/32 ,  H01L21/26 ,  H01L21/683

Abstract: A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.