Semiconductor device
    1.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08987907B2

    公开(公告)日:2015-03-24

    申请号:US13777191

    申请日:2013-02-26

    摘要: A semiconductor device may include a semiconductor layer including at least one unit device, a first interconnection on the semiconductor layer and electrically connected to the at least one unit device, a diffusion barrier layer on the first interconnection, an intermetallic dielectric layer on the diffusion barrier layer, a plug in a first region of the intermetallic dielectric layer and passing through the diffusion barrier layer so that a bottom surface thereof contacts the first interconnection, and a first dummy plug in a second region of the intermetallic dielectric layer, passing through the diffusion barrier layer, and disposed apart from the first interconnection so that a bottom surface of the first dummy plug does not contact the first interconnection.

    摘要翻译: 半导体器件可以包括半导体层,其包括至少一个单元器件,半导体层上的第一互连并且电连接到至少一个单元器件,第一互连上的扩散阻挡层,扩散阻挡层上的金属间介电层 在所述金属间介电层的第一区域中插入并穿过所述扩散阻挡层使得其底表面接触所述第一互连,以及穿过所述扩散层的所述金属间介电层的第二区域中的第一虚拟插塞 阻挡层,并且设置成与第一互连分开,使得第一虚拟插头的底表面不接触第一互连。

    Semiconductor device having isolation region
    2.
    发明授权
    Semiconductor device having isolation region 有权
    具有隔离区域的半导体器件

    公开(公告)号:US08809993B2

    公开(公告)日:2014-08-19

    申请号:US13772775

    申请日:2013-02-21

    IPC分类号: H01L29/00

    摘要: A semiconductor device can include an isolation region that defines a plurality of active regions. The plurality of active regions can include an upper surface having a short axis in a first direction and a long axis in a second direction. The plurality of active regions can be repeatedly disposed along the first direction and along the second direction, and can be spaced apart from each other. The isolation region can include a first insulating layer being in contact with side walls of a short axis pair of active regions which can be the closest active regions in the first direction among the plurality of active regions, and continuously extending along a first shortest distance between the short axis pair of active regions.

    摘要翻译: 半导体器件可以包括限定多个有源区域的隔离区域。 多个有源区域可以包括在第一方向上具有短轴和在第二方向上具有长轴的上表面。 可以沿着第一方向和第二方向重复地设置多个有源区域,并且可以彼此间隔开。 隔离区域可以包括与短轴对有源区域的侧壁接触的第一绝缘层,其可以是多个有源区域中的第一方向上的最近的有源区域,并且沿着第一最短距离 短轴对的活动区域。

    SEMICONDUCTOR DEVICE HAVING ISOLATION REGION
    3.
    发明申请
    SEMICONDUCTOR DEVICE HAVING ISOLATION REGION 有权
    具有隔离区的半导体器件

    公开(公告)号:US20130241027A1

    公开(公告)日:2013-09-19

    申请号:US13772775

    申请日:2013-02-21

    IPC分类号: H01L29/06

    摘要: A semiconductor device can include an isolation region that defines a plurality of active regions. The plurality of active regions can include an upper surface having a short axis in a first direction and a long axis in a second direction. The plurality of active regions can be repeatedly disposed along the first direction and along the second direction, and can be spaced apart from each other. The isolation region can include a first insulating layer being in contact with side walls of a short axis pair of active regions which can be the closest active regions in the first direction among the plurality of active regions, and continuously extending along a first shortest distance between the short axis pair of active regions.

    摘要翻译: 半导体器件可以包括限定多个有源区域的隔离区域。 多个有源区域可以包括在第一方向上具有短轴和在第二方向上具有长轴的上表面。 可以沿着第一方向和第二方向重复地设置多个有源区域,并且可以彼此间隔开。 隔离区域可以包括与短轴对有源区域的侧壁接触的第一绝缘层,其可以是多个有源区域中的第一方向上的最接近的有源区域,并且沿着第一最短距离 短轴对的活动区域。