公开(公告)号：US09806113B2

公开(公告)日：2017-10-31

申请号：US15477148

申请日：2017-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Jung-Chak Ahn ,  Hee-Geun Jeong

IPC: H01L27/14 ,  H01L27/146 ,  H01L31/02

CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02016

Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

公开(公告)号：US09647016B2

公开(公告)日：2017-05-09

申请号：US14340719

申请日：2014-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Jung-Chak Ahn ,  Hee-Geun Jeong

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02016

Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

公开(公告)号：US09543349B2

公开(公告)日：2017-01-10

申请号：US14478374

申请日：2014-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Hee-Geun Jeong

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14689

Abstract: Complementary metal-oxide-semiconductor (CMOS) image sensors are provided. A CMOS image sensor includes a substrate including a pixel array and a peripheral circuit region, a photodiode and a floating diffusion region in the pixel array of the substrate, a transfer gate insulating layer and a transfer gate electrode on the substrate between the photodiode and the floating diffusion region, and a peripheral gate insulating layer and a peripheral gate electrode on the peripheral circuit region. The transfer gate electrode includes a first edge that is rounded to have a first radius of curvature, and the peripheral gate electrode includes a second edge that is rounded to have a second radius of curvature smaller than the first radius of curvature.

Abstract translation: 提供了互补金属氧化物半导体（CMOS）图像传感器。 CMOS图像传感器包括在基板的像素阵列中的像素阵列和外围电路区域，光电二极管和浮动扩散区域的基板，基板上的传输栅极绝缘层和传输栅极电极之间的光电二极管和 浮动扩散区域，外围栅极绝缘层和周边栅极电极。 传输栅极包括圆形以具有第一曲率半径的第一边缘，并且外围栅电极包括圆形的第二边缘以具有小于第一曲率半径的第二曲率半径。

公开(公告)号：US10367024B2

公开(公告)日：2019-07-30

申请号：US15623635

申请日：2017-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjoo Nah ,  Jung-Chak Ahn ,  Kyung-Ho Lee

IPC: H01L27/146

Abstract: A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.

公开(公告)号：US09443898B2

公开(公告)日：2016-09-13

申请号：US14595336

申请日：2015-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Kyung-Ho Lee ,  Jun-Suk Lee

IPC: H01L29/49 ,  H01L27/146 ,  H04N5/357 ,  H04N5/3745

CPC classification number: H01L27/14641 ,  H01L27/14603 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/37457

Abstract: An image sensor includes first pixels and a first source follower transistor, which are disposed adjacent to each other in a first pixel area in a column direction, and second pixels and a second source follower transistor, which are formed in a second pixel area adjacent to the first pixel area in a row direction by the same number of the first pixels, wherein when the first pixels share the first source follower transistor and the second pixels share the second source follower transistor, while pixels selected from the same row are activated, the first source follower transistor and the second source follower transistor being activated are disposed so that locations thereof have a diagonal symmetry.

Abstract translation: 图像传感器包括在列方向上的第一像素区域中彼此相邻布置的第一像素和第一源极跟随器晶体管，以及第二像素和第二源极跟随器晶体管，其形成在与第二像素区域相邻的第二像素区域中 第一像素区域在行方向上具有相同数量的第一像素，其中当第一像素共享第一源极跟随器晶体管并且第二像素共享第二源极跟随器晶体管时，当从相同行选择的像素被激活时， 第一源极跟随器晶体管和第二源极跟随器晶体管被激活，使得它们的位置具有对角对称性。

公开(公告)号：US09300887B2

公开(公告)日：2016-03-29

申请号：US14256106

申请日：2014-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwi-Deok Lee ,  Kyung-Ho Lee ,  Hiroshige Goto ,  Sae-Young Kim ,  Sang-Chul Sul ,  Myung-Won Lee

IPC: H04N5/355

CPC classification number: H04N5/3559 ,  H04N5/35509

Abstract: An image sensor includes a photoelectric conversion unit, a signal generation unit, and a feedback unit. The photoelectric conversion unit is formed above a substrate and detects incident light to generate photo-charges based on a drive voltage. The signal generation unit is formed on the substrate and generates an analog signal based on the photo-charges. The feedback unit generates the drive voltage based on an amount of the photo-charges generated from the photoelectric conversion unit. The image sensor may perform a wide dynamic range (WDR) function.

Abstract translation: 图像传感器包括光电转换单元，信号生成单元和反馈单元。 光电转换单元形成在基板上方，并根据驱动电压检测入射光以产生光电荷。 信号生成单元形成在基板上，并且基于光电荷产生模拟信号。 反馈单元基于从光电转换单元生成的光电荷的量来产生驱动电压。 图像传感器可以执行宽动态范围（WDR）功能。

公开(公告)号：US20150243701A1

公开(公告)日：2015-08-27

申请号：US14478374

申请日：2014-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Kyung-Ho Lee ,  Hee-Geun Jeong

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14689

Abstract: Complementary metal-oxide-semiconductor (CMOS) image sensors are provided. A CMOS image sensor includes a substrate including a pixel array and a peripheral circuit region, a photodiode and a floating diffusion region in the pixel array of the substrate, a transfer gate insulating layer and a transfer gate electrode on the substrate between the photodiode and the floating diffusion region, and a peripheral gate insulating layer and a peripheral gate electrode on the peripheral circuit region. The transfer gate electrode includes a first edge that is rounded to have a first radius of curvature, and the peripheral gate electrode includes a second edge that is rounded to have a second radius of curvature smaller than the first radius of curvature.

Abstract translation: 提供了互补金属氧化物半导体（CMOS）图像传感器。 CMOS图像传感器包括在基板的像素阵列中的像素阵列和外围电路区域，光电二极管和浮动扩散区域的基板，基板上的传输栅极绝缘层和传输栅极电极之间的光电二极管和 浮动扩散区域，外围栅极绝缘层和周边栅极电极。 传输栅极包括圆形以具有第一曲率半径的第一边缘，并且外围栅电极包括圆形的第二边缘以具有小于第一曲率半径的第二曲率半径。

公开(公告)号：US20240404584A1

公开(公告)日：2024-12-05

申请号：US18678401

申请日：2024-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki-Heung Kim ,  Taeyoung Oh ,  Jongcheol Kim ,  Kyung-Ho Lee ,  Hyongryol Hwang

IPC: G11C11/4096 ,  G11C11/4076 ,  G11C11/4093

Abstract: An example memory device includes a memory cell array, a row hammer management circuit, and a read-modify-write (RMW) driver. The memory cell array includes a plurality of memory cell rows and stores count data for a number of accesses to each memory cell row. The row hammer management circuit performs an RMW operation that reads out count data corresponding to a target memory cell row among the memory cell rows, updates the read-out count data, and writes the updated count data in the memory cell array. The RMW driver generates control signals to control the RMW operation based on a precharge command. The target memory cell row is precharged after a predetermined time is elapsed from a time point where the precharge command is applied.

公开(公告)号：US10408703B2

公开(公告)日：2019-09-10

申请号：US14207348

申请日：2014-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Min Kil ,  Seong-Joon Kweon ,  Kyung-Ho Lee

IPC: G01M3/32

Abstract: A method of checking a sealing state of a housing includes starting an operation of a pressure sensor configured to measure an internal pressure of the housing. The method includes checking whether or not the housing is pressed. The method further includes checking the sealing state of the housing through checking a measured value of the pressure sensor under a pressure of the housing. An apparatus for checking a sealing state of a housing includes the housing configured to keep an internal space thereof sealed off from an outside, a pressure sensor configured to measure a pressure of the internal space, and an interface unit configured to provide to the pressure sensor a control signal that controls an operation of the pressure sensor, and provide pressure information detected through the pressure sensor.

公开(公告)号：US10014338B2

公开(公告)日：2018-07-03

申请号：US15671546

申请日：2017-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Ho Lee

IPC: H01L27/146 ,  H04N5/232 ,  H04N5/225 ,  G02B7/36

CPC classification number: H01L27/14625 ,  G02B7/365 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H04N5/2254 ,  H04N5/23212 ,  H04N5/232122 ,  H04N5/36961

Abstract: An image sensor includes multiple unit pixels defined by a pixel isolation layer on a substrate, at least a pair of photoelectric converters in each of the unit pixels and at least an optical divider on a rear surface of the substrate at each of the unit pixels. The photoelectric converters are separated by at least a converter separator in each of the unit pixels and generate photo electrons in response to an incident light that is incident to an incident point of the respective unit pixel. The optical divider is overlapped with the incident point and divides the incident light into a plurality of split lights having the same amount of light such that each of the photoelectric converters receives the same amount of light from the split lights.